《半导体物理性能手册 第3卷 上 英文》PDF下载

  • 购买积分:11 如何计算积分?
  • 作  者:(日)足立贞夫主编
  • 出 版 社:哈尔滨:哈尔滨工业大学出版社
  • 出版年份:2014
  • ISBN:9787560345185
  • 页数:253 页
图书介绍:本册由8章组成,介绍10立方硫化镉(c cd),11纤锌矿型硫化镉(wcd),12立方硒化镉(c-CdSe),13纤锌矿硒化镉(w-CdSe),14碲化镉(CdTe),15立方硫化汞(β-HgS),16汞硒化物(HgSe),17碲化汞(HgTe),8种化合物的结构属性、热性能、弹性、声子和晶格振动性质、集成效应和相关属性、能带结构:能带、能带结构:电子和孔有效质量、电子形变势、电子亲和力和肖特基势垒高度、光学特性、,电光和非线性光学特性、载体运输属性等。

1 Magnesium Oxide(MgO) 1

1.1 Structural Properties 1

1.1.1 Ionicity 1

1.1.2 Elemental Isotopic Abundance and Molecular Weight 1

1.1.3 Crystal Structure and Space Group 2

1.1.4 Lattice Constant and Its Related Parameters 2

1.1.5 Structural Phase Transition 2

1.1.6 Cleavage Plane 3

1.2 Thermal Properties 3

1.2.1 Melting Point and Its Related Parameters 3

1.2.2 Specific Heat 4

1.2.3 Debye Temperature 5

1.2.4 Thermal Expansion Coefficient 6

1.2.5 Thermal Conductivity and Diffusivity 6

1.3 Elastic Properties 7

1.3.1 Elastic Constant 7

1.3.2 Third-Order Elastic Constant 9

1.3.3 Young's Modulus,Poisson's Ratio,and Similar 9

1.3.4 Microhardness 10

1.3.5 Sound Velocity 10

1.4 Phonons and Lattice Vibronic Properties 11

1.4.1 Phonon Dispersion Relation 11

1.4.2 Phonon Frequency 12

1.4.3 Mode Grüneisen Parameter 13

1.4.4 Phonon Deformation Potential 13

1.5 Collective Effects and Related Properties 13

1.5.1 Piezoelectric Constant 13

1.5.2 Fr?hlich Coupling Constant 13

1.6 Energy-Band Structure:Energy-Band Gaps 13

1.6.1 Basic Properties 13

1.6.2 Eo-Gap Region 15

1.6.3 Higher-Lying Direct Gap 15

1.6.4 Lowest Indirect Gap 16

1.6.5 Conduction-Valley Energy Separation 16

1.6.6 Direct-Indirect-Gap Transition Pressure 16

1.7 Energy-Band Structure:Electron and Hole Effective Masses 17

1.7.1 Electron Effective Mass:Γ Valley 17

1.7.2 Electron Effective Mass:Satellite Valley 17

1.7.3 Hole Effective Mass 17

1.8 Electronic Deformation Potential 17

1.8.1 Intravalley Deformation Potential:Γ Point 17

1.8.2 Intravalley Deformation Potential:High-Symmetry Points 17

1.8.3 Intervalley Deformation Potential 17

1.9 Electron Affinity and Schottky Barrier Height 18

1.9.1 Electron Affinity 18

1.9.2 Schottky Barrier Height 18

1.10 Optical Properties 18

1.10.1 Summary of Optical Dispersion Relations 18

1.10.2 The Reststrahlen Region 19

1.10.3 At or Near the Fundamental Absorption Edge 20

1.10.4 The Interband Transition Region 22

1.10.5 Free-Carrier Absorption and Related Phenomena 22

1.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 22

1.11.1 Elastooptic Effect 22

1.11.2 Linear Electrooptic Constant 23

1.11.3 Quadratic Electrooptic Constant 23

1.11.4 Franz-Keldysh Effect 23

1.11.5 Nonlinear Optical Constant 23

1.12 Carrier Transport Properties 23

1.12.1 Low-Field Mobility:Electrons 23

1.12.2 Low-Field Mobility:Holes 23

1.12.3 High-Field Transport:Electrons 23

1.12.4 High-Field Transport:Holes 23

1.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 23

1.12.6 Minority-Carrier Transport:Holes in n-Type Materials 23

1.12.7 Impact Ionization Coefficient 24

2 Zincblende Magnesium Sulphide(β-MgS) 25

2.1 Structural Properties 25

2.1.1 Ionicity 25

2.1.2 Elemental Isotopic Abundance and Molecular Weight 25

2.1.3 Crystal Structure and Space Group 26

2.1.4 Lattice Constant and Its Related Parameters 26

2.1.5 Structural Phase Transition 27

2.1.6 Cleavage Plane 27

2.2 Thermal Properties 27

2.2.1 Melting Point and Its Related Parameters 27

2.2.2 Specific Heat 27

2.2.3 Debye Temperature 27

2.2.4 Thermal Expansion Coefficient 27

2.2.5 Thermal Conductivity and Diffusivity 27

2.3 Elastic Properties 28

2.3.1 Elastic Constant 28

2.3.2 Third-Order Elastic Constant 28

2.3.3 Young's Modulus,Poisson's Ratio,and Similar 28

2.3.4 Microhardness 29

2.3.5 Sound Velocity 29

2.4 Phonons and Lattice Vibronic Properties 30

2.4.1 Phonon Dispersion Relation 30

2.4.2 Phonon Frequency 30

2.4.3 Mode Grüneisen Parameter 30

2.4.4 Phonon Deformation Potential 30

2.5 Collective Effects and Related Properties 30

2.5.1 Piezoelectric Constant 30

2.5.2 Fr?hlich Coupling Constant 30

2.6 Energy-Band Structure:Energy-Band Gaps 31

2.6.1 Basic Properties 31

2.6.2 Eo-Gap Region 31

2.6.3 Higher-Lying Direct Gap 32

2.6.4 Lowest Indirect Gap 32

2.6.5 Conduction-Valley Energy Separation 32

2.6.6 Direct-Indirect-Gap Transition Pressure 32

2.7 Energy-Band Structure:Electron and Hole Effective Masses 32

2.7.1 Electron Effective Mass:Γ Valley 32

2.7.2 Electron Effective Mass:Satellite Valley 33

2.7.3 Hole Effective Mass 33

2.8 Electronic Deformation Potential 34

2.8.1 Intravalley Deformation Potential:Γ Point 34

2.8.2 Intravalley Deformation Potential:High-Symmetry Points 34

2.8.3 Intervalley Deformation Potential 34

2.9 Electron Affinity and Schottky Barrier Height 34

2.9.1 Electron Affinity 34

2.9.2 Schottky Barrier Height 35

2.10 Optical Properties 35

2.10.1 Summary of Optical Dispersion Relations 35

2.10.2 The Reststrahlen Region 35

2.10.3 At or Near the Fundamental Absorption Edge 35

2.10.4 The Interband Transition Region 35

2.10.5 Free-Carrier Absorption and Related Phenomena 35

2.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 35

2.11.1 Elastooptic Effect 35

2.11.2 Linear Electrooptic Constant 35

2.11.3 Quadratic Electrooptic Constant 35

2.11.4 Franz-Keldysh Effect 35

2.11.5 Nonlinear Optical Constant 35

2.12 Carrier Transport Properties 36

2.12.1 Low-Field Mobility:Electrons 36

2.12.2 Low-Field Mobility:Holes 36

2.12.3 High-Field Transport:Electrons 36

2.12.4 High-Field Transport:Holes 36

2.12.5 Minority-Carrier Transport:Electrons inp-Type Materials 36

2.12.6 Minority-Carrier Transport:Holes inn-Type Materials 36

2.12.7 Impact Ionization Coefficient 36

3 Zincblende Magnesium Selenide(β-MgSe) 37

3.1 Structural Properties 37

3.1.1 Ionicity 37

3.1.2 Elemental Isotopic Abundance and Molecular Weight 37

3.1.3 Crystal Structure and Space Group 38

3.1.4 Lattice Constant and Its Related Parameters 38

3.1.5 Structural Phase Transition 39

3.1.6 Cleavage Plane 39

3.2 Thermal Properties 39

3.2.1 Melting Point and Its Related Parameters 39

3.2.2 Specific Heat 39

3.2.3 Debye Temperature 39

3.2.4 Thermal Expansion Coefficient 39

3.2.5 Thermal Conductivity and Diffusivity 39

3.3 Elastic Properties 40

3.3.1 Elastic Constant 40

3.3.2 Third-Order Elastic Constant 40

3.3.3 Young's Modulus,Poisson's Ratio,and Similar 40

3.3.4 Microhardness 41

3.3.5 Sound Velocity 41

3.4 Phonons and Lattice Vibronic Properties 42

3.4.1 Phonon Dispersion Relation 42

3.4.2 Phonon Frequency 42

3.4.3 Mode Grüneisen Parameter 42

3.4.4 Phonon Deformation Potential 42

3.5 Collective Effects and Related Properties 43

3.5.1 Piezoelectric Constant 43

3.5.2 Fr?hlich Coupling Constant 43

3.6 Energy-Band Structure:Energy-Band Gaps 43

3.6.1 Basic Properties 43

3.6.2 E0-Gap Region 44

3.6.3 Higher-Lying Direct Gap 45

3.6.4 Lowest Indirect Gap 45

3.6.5 Conduction-Valley Energy Separation 45

3.6.6 Direct-Indirect-Gap Transition Pressure 45

3.7 Energy-Band Structure:Electron and Hole Effective Masses 45

3.7.1 Electron Effective Mass:Γ Valley 45

3.7.2 Electron Effective Mass:Satellite Valley 46

3.7.3 Hole Effective Mass 46

3.8 Electronic Deformation Potential 47

3.8.1 Intravalley Deformation Potential:Γ Point 47

3.8.2 Intravalley Deformation Potential:High-Symmetry Points 48

3.8.3 Intervalley Deformation Potential 48

3.9 Electron Affinity and Schottky Barrier Height 48

3.9.1 Electron Affinity 48

3.9.2 S chottky Barrier Height 48

3.10 Optical Properties 48

3.10.1 Summary of Optical Dispersion Relations 48

3.10.2 The Reststrahlen Region 48

3.10.3 At or Near the Fundamental Absorption Edge 48

3.10.4 The Interband Transition Region 49

3.10.5 Free-Carrier Absorption and Related Phenomena 49

3.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 49

3.11.1 Elastooptic Effect 49

3.11.2 Linear Electrooptic Constant 49

3.11.3 Quadratic Electrooptic Constant 49

3.11.4 Franz-Keldysh Effect 49

3.11.5 Nonlinear Optical Constant 50

3.12 Carrier Transport Properties 50

3.12.1 Low-Field Mobility:Electrons 50

3.12.2 Low-Field Mobility:Holes 50

3.12.3 High-Field Transport:Electrons 50

3.12.4 High-Field Transport:Holes 50

3.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 50

3.12.6 Minority-Carrier Transport:Holes in n-Type Materials 50

3.12.7 Impact Ionization Coefficient 50

4 Zincblende Magnesium Telluride(β-MgTe) 51

4.1 Structural Properties 51

4.1.1 Ionicity 51

4.1.2 Elemental Isotopic Abundance and Molecular Weight 51

4.1.3 Crystal Structure and Space Group 52

4.1.4 Lattice Constant and Its Related Parameters 52

4.1.5 Structural Phase Transition 53

4.1.6 Cleavage Plane 53

4.2 Thermal Properties 53

4.2.1 Melting Point and Its Related Parameters 53

4.2.2 Specific Heat 53

4.2.3 Debye Temperature 53

4.2.4 Thermal Expansion Coefficient 53

4.2.5 Thermal Conductivity and Diffusivity 53

4.3 Elastic Properties 54

4.3.1 Elastic Constant 54

4.3.2 Third-Order Elastic Constant 54

4.3.3 Young's Modulus,Poisson's Ratio,and Similar 54

4.3.4 Microhardness 55

4.3.5 Sound Velocity 55

4.4 Phonons and Lattice Vibronic Properties 56

4.4.1 Phonon Dispersion Relation 56

4.4.2 Phonon Frequency 56

4.4.3 Mode Griineisen Parameter 56

4.4.4 Phonon Deformation Potential 56

4.5 Collective Effects and Related Properties 56

4.5.1 Piezoelectric Constant 56

4.5.2 Fr?hlich Coupling Constant 56

4.6 Energy-Band Structure:Energy-Band Gaps 57

4.6.1 Basic Properties 57

4.6.2 Eo-Gap Region 58

4.6.3 Higher-Lying Direct Gap 59

4.6.4 Lowest Indirect Gap 59

4.6.5 Conduction-Valley Energy Separation 59

4.6.6 Direct-Indirect-Gap Transition Pressure 59

4.7 Energy-Band Structure:Electron and Hole Effective Masses 60

4.7.1 Electron Effective Mass:Γ Valley 60

4.7.2 Electron Effective Mass:Satellite Valley 60

4.7.3 Hole Effective Mass 60

4.8 Electronic Deformation Potential 61

4.8.1 Intravalley Deformation Potential:Γ Point 61

4.8.2 Intravalley Deformation Potential:High-Symmetry Points 61

4.8.3 Intervalley Deformation Potential 61

4.9 Electron Affinity and Schottky Barrier Height 61

4.9.1 Electron Affinity 61

4.9.2 Schottky Barrier Height 62

4.10 Optical Properties 62

4.10.1 Summary of Optical Dispersion Relations 62

4.10.2 The Reststrahlen Region 62

4.10.3 At or Near the Fundamental Absorption Edge 62

4.10.4 The Interband Transition Region 63

4.10.5 Free-Carrier Absorption and Related Phenomena 63

4.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 63

4.11.1 Elastooptic Effect 63

4.11.2 Linear Electrooptic Constant 63

4.11.3 Quadratic Electrooptic Constant 63

4.11.4 Franz-Keldysh Effect 63

4.11.5 Nonlinear Optical Constant 63

4.12 Carrier Transport Properties 63

4.12.1 Low-Field Mobility:Electrons 63

4.12.2 Low-Field Mobility:Holes 63

4.12.3 High-Field Transport:Electrons 64

4.12.4 High-Field Transport:Holes 64

4.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 64

4.12.6 Minority-Carrier Transport:Holes in n-Type Materials 64

4.12.7 Impact Ionization Coefficient 64

5 Zinc Oxide(ZnO) 65

5.1 Structural Properties 65

5.1.1 Ionicity 65

5.1.2 Elemental Isotopic Abundance and Molecular Weight 65

5.1.3 Crystal Structure and Space Group 66

5.1.4 Lattice Constant and Its Related Parameters 66

5.1.5 Structural Phase Transition 66

5.1.6 Cleavage Plane 67

5.2 Thermal Properties 67

5.2.1 Melting Point and Its Related Parameters 67

5.2.2 Specific Heat 68

5.2.3 Debye Temperature 68

5.2.4 Thermal Expansion Coefficient 68

5.2.5 Thermal Conductivity and Diffusivity 69

5.3 Elastic Properties 71

5.3.1 Elastic Constant 71

5.3.2 Third-Order Elastic Constant 72

5.3.3 Young's Modulus,Poisson's Ratio,and Similar 72

5.3.4 Microhardness 73

5.3.5 Sound Velocity 73

5.4 Phonons and Lattice Vibronic Properties 73

5.4.1 Phonon Dispersion Relation 73

5.4.2 Phonon Frequency 74

5.4.3 Mode Grüneisen Parameter 74

5.4.4 Phonon Deformation Potential 75

5.5 Collective Effects and Related Properties 75

5.5.1 Piezoelectric Constant 75

5.5.2 Fr?hlich Coupling Constant 75

5.6 Energy-Band Structure:Energy-Band Gaps 76

5.6.1 Basic Properties 76

5.6.2 Eo-Gap Region 77

5.6.3 Higher-Lying Direct Gap 81

5.6.4 Lowest Indirect Gap 81

5.6.5 Conduction-Valley Energy Separation 82

5.6.6 Direct-Indirect-Gap Transition Pressure 82

5.7 Energy-Band Structure:Electron and Hole Effective Masses 82

5.7.1 Electron Effective Mass:Γ Valley 82

5.7.2 Electron Effective Mass:Satellite Valley 83

5.7.3 Hole Effective Mass 83

5.8 Electronic Deformation Potential 84

5.8.1 Intravalley Deformation Potential:Γ Point 84

5.8.2 Intravalley Deformation Potential:High-Symmetry Points 84

5.8.3 Intervalley Deformation Potential 84

5.9 Electron Affinity and Schottky Barrier Height 85

5.9.1 Electron Affinity 85

5.9.2 Schottky Barrier Height 85

5.10 Optical Properties 86

5.10.1 Summary of Optical Dispersion Relations 86

5.10.2 The Reststrahlen Region 87

5.10.3 At or Near the Fundamental Absorption Edge 88

5.10.4 The Interband Transition Region 91

5.10.5 Free-Carrier Absorption and Related Phenomena 92

5.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 92

5.11.1 Elastooptic Effect 92

5.11.2 Linear Electrooptic Constant 93

5.11.3 Quadratic Electrooptic Constant 93

5.11.4 Franz-Keldysh Effect 94

5.11.5 Nonlinear Optical Constant 94

5.12 Carrier Transport Properties 95

5.12.1 Low-Field Mobility:Electrons 95

5.12.2 Low-Field Mobility:Holes 97

5.12.3 High-Field Transport:Electrons 97

5.12.4 High-Field Transport:Holes 97

5.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 97

5.12.6 Minority-Carrier Transport:Holes in n-Type Materials 97

5.12.7 Impact Ionization Coefficient 97

6 Wurtzite Zinc Sulphide(α-ZnS) 99

6.1 Structural Properties 99

6.1.1 Ionicity 99

6.1.2 Elemental Isotopic Abundance and Molecular Weight 99

6.1.3 Crystal Structure and Space Group 100

6.1.4 Lattice Constant and Its Related Parameters 100

6.1.5 Structural Phase Transition 100

6.1.6 Cleavage Plane 100

6.2 Thermal Properties 101

6.2.1 Melting Point and Its Related Parameters 101

6.2.2 Specific Heat 101

6.2.3 Debye Temperature 101

6.2.4 Thermal Expansion Coefficient 101

6.2.5 Thermal Conductivity and Diffusivity 102

6.3 Elastic Properties 102

6.3.1 Elastic Constant 102

6.3.2 Third-Order Elastic Constant 103

6.3.3 Young's Modulus,Poisson's Ratio,and Similar 103

6.3.4 Microhardness 104

6.3.5 Sound Velocity 104

6.4 Phonons and Lattice Vibronic Properties 105

6.4.1 Phonon Dispersion Relation 105

6.4.2 Phonon Frequency 105

6.4.3 Mode Grüneisen Parameter 105

6.4.4 Phonon Deformation Potential 105

6.5 Collective Effects and Related Properties 106

6.5.1 Piezoelectric Constant 106

6.5.2 Fr?hlich Coupling Constant 106

6.6 Energy-Band Structure:Energy-Band Gaps 106

6.6.1 Basic Properties 106

6.6.2 E0-Gap Region 108

6.6.3 Higher-Lying Direct Gap 109

6.6.4 Lowest Indirect Gap 110

6.6.5 Conduction-Valley Energy Separation 110

6.6.6 Direct-Indirect-Gap Transition Pressure 110

6.7 Energy-Band Structure:Electron and Hole Effective Masses 110

6.7.1 Electron Effective Mass:Γ Valley 110

6.7.2 Electron Effective Mass:Satellite Valley 111

6.7.3 Hole Effective Mass 111

6.8 Electronic Deformation Potential 111

6.8.1 Intravalley Deformation Potential:Γ Point 111

6.8.2 Intravalley Deformation Potential:High-Symmetry Points 112

6.8.3 Intervalley Deformation Potential 112

6.9 Electron Affinity and Schottky Barrier Height 112

6.9.1 Electron Affinity 112

6.9.2 Schottky Barrier Height 112

6.10 Optical Properties 113

6.10.1 Summary of Optical Dispersion Relations 113

6.10.2 The Reststrahlen Region 114

6.10.3 At or Near the Fundamental Absorption Edge 115

6.10.4 The Interband Transition Region 117

6.10.5 Free-Carrier Absorption and Related Phenomena 117

6.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 117

6.11.1 Elastooptic Effect 117

6.11.2 Linear Electrooptic Constant 118

6.11.3 Quadratic Electrooptic Constant 118

6.11.4 Franz-Keldysh Effect 118

6.11.5 Nonlinear Optical Constant 118

6.12 Carrier Transport Properties 119

6.12.1 Low-Field Mobility:Electrons 119

6.12.2 Low-Field Mobility:Holes 120

6.12.3 High-Field Transport:Electrons 120

6.12.4 High-Field Transport:Holes 121

6.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 121

6.12.6 Minority-Carrier Transport:Holes in n-Type Materials 121

6.12.7 Impact Ionization Coefficient 121

7 Cubic Zinc Sulphide(β-ZnS) 123

7.1 Structural Properties 123

7.1.1 Ionicity 123

7.1.2 Elemental Isotopic Abundance and Molecular Weight 123

7.1.3 Crystal Structure and Space Group 124

7.1.4 Lattice Constant and Its Related Parameters 124

7.1.5 Structural Phase Transition 124

7.1.6 Cleavage Plane 125

7.2 Thermal Properties 126

7.2.1 Melting Point and Its Related Parameters 126

7.2.2 Specific Heat 126

7.2.3 Debye Temperature 127

7.2.4 Thermal Expansion Coefficient 128

7.2.5 Thermal Conductivity and Diffusivity 129

7.3 Elastic Properties 129

7.3.1 Elastic Constant 129

7.3.2 Third-Order Elastic Constant 130

7.3.3 Young's Modulus,Poisson's Ratio,and Similar 130

7.3.4 Microhardness 131

7.3.5 Sound Velocity 131

7.4 Phonons and Lattice Vibronic Properties 132

7.4.1 Phonon Dispersion Relation 132

7.4.2 Phonon Frequency 133

7.4.3 Mode Grüneisen Parameter 134

7.4.4 Phonon Deformation Potential 134

7.5 Collective Effects and Related Properties 134

7.5.1 Piezoelectric Constant 134

7.5.2 Fr?hlich Coupling Constant 135

7.6 Energy-Band Structure:Energy-Band Gaps 135

7.6.1 Basic Properties 135

7.6.2 Eo-Gap Region 136

7.6.3 Higher-Lying Direct Gap 140

7.6.4 Lowest Indirect Gap 141

7.6.5 Conduction-Valley Energy Separation 141

7.6.6 Direct-Indirect-Gap Transition Pressure 141

7.7 Energy-Band Structure:Electron and Hole Effective Masses 142

7.7.1 Electron Effective Mass:Γ Valley 142

7.7.2 Electron Effective Mass:Satellite Valley 142

7.7.3 Hole Effective Mass 142

7.8 Electronic Deformation Potential 143

7.8.1 Intravalley Deformation Potential:Γ Point 143

7.8.2 Intravalley Deformation Potential:High-Symmetry Points 146

7.8.3 Intervalley Deformation Potential 146

7.9 Electron Affinity and Schottky Barrier Height 147

7.9.1 Electron Affinity 147

7.9.2 Schottky Barrier Height 147

7.10 Optical Properties 147

7.10.1 Summary of Optical Dispersion Relations 147

7.10.2 The Reststrahlen Region 148

7.10.3 At or Near the Fundamental Absorption Edge 150

7.10.4 The Interband Transition Region 154

7.10.5 Free-Carrier Absorption and Related Phenomena 154

7.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 154

7.11.1 Elastooptic Effect 154

7.11.2 Linear Electrooptic Constant 155

7.11.3 Quadratic Electrooptic Constant 156

7.11.4 Franz-Keldysh Effect 156

7.11.5 Nonlinear Optical Constant 157

7.12 Carrier Transport Properties 158

7.12.1 Low-Field Mobility:Electrons 158

7.12.2 Low-Field Mobility:Holes 159

7.12.3 High-Field Transport:Electrons 159

7.12.4 High-Field Transport:Holes 160

7.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 160

7.12.6 Minority-Carrier Transport:Holes in n-Type Materials 160

7.12.7 Impact Ionization Coefficient 160

8 Zinc Selenide(ZnSe) 161

8.1 Structural Properties 161

8.1.1 Ionicity 161

8.1.2 Elemental Isotopic Abundance and Molecular Weight 161

8.1.3 Crystal Structure and Space Group 162

8.1.4 Lattice Constant and Its Related Parameters 162

8.1.5 Structural Phase Transition 162

8.1.6 Cleavage Plane 163

8.2 Thermal Properties 163

8.2.1 Melting Point and Its Related Parameters 163

8.2.2 Specific Heat 164

8.2.3 Debye Temperature 165

8.2.4 Thermal Expansion Coefficient 166

8.2.5 Thermal Conductivity and Diffusivity 167

8.3 Elastic Properties 168

8.3.1 Elastic Constant 168

8.3.2 Third-Order Elastic Constant 169

8.3.3 Young's Modulus,Poisson's Ratio,and Similar 169

8.3.4 Microhardness 170

8.3.5 Sound Velocity 170

8.4 Phonons and Lattice Vibronic Properties 171

8.4.1 Phonon Dispersion Relation 171

8.4.2 Phonon Frequency 172

8.4.3 Mode Grüneisen Parameter 173

8.4.4 Phonon Deformation Potential 174

8.5 Collective Effects and Related Properties 174

8.5.1 Piezoelectric Constant 174

8.5.2 Fr?hlich Coupling Constant 174

8.6 Energy-Band Structure:Energy-Band Gaps 175

8.6.1 Basic Properties 175

8.6.2 Eo-Gap Region 176

8.6.3 Higher-Lying Direct Gap 180

8.6.4 Lowest Indirect Gap 182

8.6.5 Conduction-Valley Energy Separation 183

8.6.6 Direct-Indirect-Gap Transition Pressure 184

8.7 Energy-Band Structure:Electron and Hole Effective Masses 184

8.7.1 Electron Effective Mass:Γ Valley 184

8.7.2 Electron Effective Mass:Satellite Valley 185

8.7.3 Hole Effective Mass 185

8.8 Electronic Deformation Potential 186

8.8.1 Intravalley Deformation Potential:Γ Point 186

8.8.2 Intravalley Deformation Potential:High-Symmetry Points 189

8.8.3 Intervalley Deformation Potential 190

8.9 Electron Affinity and Schottky Barrier Height 191

8.9.1 Electron Affinity 191

8.9.2 Schottky Barrier Height 191

8.10 Optical Properties 192

8.10.1 Summary of Optical Dispersion Relations 192

8.10.2 The Reststrahlen Region 193

8.10.3 At or Near the Fundamental Absorption Edge 195

8.10.4 The Interband Transition Region 199

8.10.5 Free-Carrier Absorption and Related Phenomena 200

8.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 200

8.11.1 Elastooptic Effect 200

8.11.2 Linear Electrooptic Constant 202

8.11.3 Quadratic Electrooptic Constant 202

8.11.4 Franz-Keldysh Effect 202

8.11.5 Nonlinear Optical Constant 203

8.12 Carrier Transport Properties 205

8.12.1 Low-Field Mobility:Electrons 205

8.12.2 Low-Field Mobility:Holes 206

8.12.3 High-Field Transport:Electrons 207

8.12.4 High-Field Transport:Holes 208

8.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 208

8.12.6 Minority-Carrier Transport:Holes in n-Type Materials 208

8.12.7 Impact Ionization Coefficient 209

9 Zinc Telluride(ZnTe) 211

9.1 Structural Properties 211

9.1.1 Ionicity 211

9.1.2 Elemental Isotopic Abundance and Molecular Weight 211

9.1.3 Crystal Structure and Space Group 212

9.1.4 Lattice Constant and Its Related Parameters 212

9.1.5 Structural Phase Transition 212

9.1.6 Cleavage Plane 213

9.2 Thermal Properties 214

9.2.1 Melting Point and Its Related Parameters 214

9.2.2 Specific Heat 214

9.2.3 Debye Temperature 216

9.2.4 Thermal Expansion Coefficient 216

9.2.5 Thermal Conductivity and Diffusivity 218

9.3 Elastic Properties 218

9.3.1 Elastic Constant 218

9.3.2 Third-Order Elastic Constant 219

9.3.3 Young's Modulus,Poisson's Ratio,and Similar 219

9.3.4 Microhardness 220

9.3.5 Sound Velocity 221

9.4 Phonons and Lattice Vibronic Properties 221

9.4.1 Phonon Dispersion Relation 221

9.4.2 Phonon Frequency 222

9.4.3 Mode Grüneisen Parameter 223

9.4.4 Phonon Deformation Potential 224

9.5 Collective Effects and Related Properties 224

9.5.1 Piezoelectric Constant 224

9.5.2 Fr?hlich Coupling Constant 225

9.6 Energy-Band Structure:Energy-Band Gaps 225

9.6.1 Basic Properties 225

9.6.2 Eo-Gap Region 226

9.6.3 Higher-Lying Direct Gap 230

9.6.4 Lowest Indirect Gao 233

9.6.5 Conduction-Valley Energy Separation 233

9.6.6 Direct-Indirect-Gap Transition Pressure 234

9.7 Energy-Band Structure:Electron and Hole Effective Masses 234

9.7.1 Electron Effective Mass:Γ Valley 234

9.7.2 Electron Effective Mass:Satellite Valley 234

9.7.3 Hole Effective Mass 235

9.8 Electronic Deformation Potential 236

9.8.1 Intravalley Deformation Potential:Γ Point 236

9.8.2 Intravalley Deformation Potential:High-Symmetry Points 238

9.8.3 Intervalley Deformation Potential 239

9.9 Electron Affinity and Schottky Barrier Height 240

9.9.1 Electron Affinity 240

9.9.2 Schottky Barrier Height 240

9.10 Optical Properties 241

9.10.1 Summary of Optical Dispersion Relations 241

9.10.2 The Reststrahlen Region 242

9.10.3 At or Near the Fundamental Absorption Edge 243

9.10.4 The Interband Transition Region 246

9.10.5 Free-Carrier Absorption and Related Phenomena 247

9.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 247

9.11.1 Elastooptic Effect 247

9.11.2 Linear Electrooptic Constant 248

9.11.3 Quadratic Electrooptic Constant 249

9.11.4 Franz-Keldysh Effect 249

9.11.5 Nonlinear Optical Constant 249

9.12 Carrier Transport Properties 250

9.12.1 Low-Field Mobility:Electrons 250

9.12.2 Low-Field Mobility:Holes 251

9.12.3 High-Field Transport:Electrons 252

9.12.4 High-Field Transport:Holes 253

9.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 253

9.12.6 Minority-Carrier Transport:Holes in n-Type Materials 253

9.12.7 Impact Ionization Coefficient 253