1.Expansion of Potassium and Sodium Chloride Crystals Due to X－Ray Irradiation of Weak Intensities 1
2.锑化铟的机械损伤 25
3.锑化铟的热处理 41
4.杂质和缺陷在砷化镓中的行为 59
5.砷化镓材料热学稳定性的初步研究-N+型外延工艺热循环引起的退化 107
6.半导体中的缺陷 132
7.LPE—GaAs中残留杂质的研究 163
8.GROWTH AND PROPERTIES OF HIGH PURITY LPE-GaAS 168
9.氢对氢化无定型硅能隙的影响 188
10.原生直拉无位错硅单晶中漩涡缺陷的观察 201
11.掺锢低拉错密度的半绝缘砷化镓 215
12.用离子自注入改善SOS单晶膜质量的研究 221
13.A possible model:Photothermal excitation via an excited state in the Si:Pd level 238
14.直拉硅单晶中的新施主 247
15.IDENTIFICATION OF NEUTRAL NEW DONOR RELATED COMPLEX LUMINESCENCE CENTER IN CZOCHRALSKI SILICON 255
16.微重力条件下生长GaAs单晶的电学和光学性质研究 261
17.太空生长掺Te-GaAs单晶的结构缺陷观测 271
18.LEC GaAs中缺陷的光致发光研究 283
19.n型LEC—GaAs中E5能级研究 294
20.PREPARATION AND PROPER TIES OF GaAs SINGLE CRYSTAL GROWN FROM MELT UNDER MICROGRAVITY CONDITIONS 301
21.A bsorption peaks at 2663 and 2692cm-1 observed in neutron-transmutation doped silicon 316
22.硅中与钯相关的深能级研究 327
23.掺In半绝缘GaAS衬底上外延GaAs的晶格失配研究 339
24.A novel model of “new donors” in Czochralski-grown silicon 348
25.NEUTRON IRRADIATION INDUCED PHOTOLUMINESCENCE FROM SILICON CRYSTAL GROWN IN AMBIENT HYDROGEN 361
26.INFLUENCE OF In CONTENT ON DEFECTS OF LPE GaAs EPILAYERS 370
27.SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN Te- ANDSi-DOPED GaAs GROWN IN A REDUCED GRAVITY ENVIRONMENT 387
28.AIxGa1-xAsySb1-y/GaSb的LPE生长与性质研究 404
29.Electrical Characteristics of GaAs grown from the melt in a reduced-gravity environment 419
30.OPTICAL PROPERTIES OF AlxGa1-xAsySb1-y BY LIQUID PHASE EPITAXY 432
31.SI-GaAs单晶热稳定性及其电学补偿机理研究 445