林兰英传略 1
《中国女院士——林兰英》目录 2
中国女院士——林兰英（节选） 3
女院士林兰英的童年 5
中国女院士林兰英传奇之一：为了古老而年轻的祖国 11
中国太空材料之母 16
《中国女院士林兰英》文学传记问世 25
女科学家的最后冲刺 26
林兰英院士简历 29
感言录和访问记 31
林兰英先生和北方微电子研究开发基地 32
生命不息、攀登不止——记我所认识的林兰英院士 34
学习林兰英先生为科学事业不断开拓永不休止的献身精神 36
良师益友 38
学界之尊，青年楷模 40
林兰英院士对我的教诲 42
晶莹的种子——记半导体材料专家林兰英 44
中国第一根单晶硅研制者 48
一个科学家的心愿——访问林兰英同志 51
生命的鼓点永远铿锵有力——物理学家林兰英谈她与文艺 54
平等，首先是贡献上的平等——访中国科学院女院士林兰英 56
乡情·国情·科学情——访全国人大代表、中科院院士林兰英 58
林兰英科学论文选 61
A 单晶篇 62
A1 EFFECTS OF POINT DEFECTS ON LATTICE PARAMETERS OF SEMICONDUCTORS 63
A2 NONDESTRUCTIVE MEASUREMENTS OF STOICHIOMETRY IN UNDOPED SEMIINSULATING GALLIUM ARSENIDE BY X-RAY BOND METHOD 74
A3 DISLOCATIONS AND PRECIPITATES IN SEMI-INSULATING GALLIUM ARSENIDE REVEALED BY ULTRASONIC ABRAHAMS-BUIOCCHI ETCHING 79
A4 STOICHIOMETRIC DEFECTS IN SEMI-INSULATING GaAs 82
A5 THE ROLE OF HYDROGEN IN SEMI-INSULATING INP 88
A6 RELATIONSHIP BETWEEN DEEP-LEVEL CENTERS AND STOICHIOMETRY IN SEMI-INSULATING GALLIUM ARSENIDE 93
A7 LEC掺In-GaAs单晶中的一种新型缺陷 97
A8 氢气和氩气中区熔生长的中子嬗变掺杂硅退火行为的研究 104
B 空间篇 112
B1 GaAs SINGLE CRYSTAL GROWTH FROM MELT IN SPACE 113
B2 SPATIAL DISTRIBUTIONS OF IMPURITIES AND DEFECTS IN Te-AND Si-DOPED GaAs GROWN IN A REDUCED GRAVITY ENVIRONMENT 118
B3 PREPARATION AND PROPERTIES OF SEMI-INSULATING GaAs SINGLE CRYSTAL UNDER MICROGRAVITY CONDITIONS 127
B4 PREPARATION OF 24mm DIAMETER GaAs CRYSTAL IN SPACE 133
B5 PROPERTIES AND APPLICATIONS OF GaAs SINGLE CRYSTAL GROWN UNDER MICROGRAVITY CONDITIONS 139
B6 GaAs SINGLE CRYSTAL GROWTH IN SPACE 147
B7 IMPROVEMENT OF STOICHIOMETRY IN SEMI-INSULATING GALLIUM ARSENIDE GROWN UNDER MICROGRAVITY 167
B8 PRELIMINARY RESULTS OF GaAs SINGLE CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS 171
B9 GROWTH OF GaAs SINGLE CRYSTALS AT HIGH GRAVITY 176
B10 太空生长掺Te-GaAs单晶的结构缺陷观测 181
B11 太空生长半绝缘砷化镓单晶及其应用 188
附录 空间生长半绝缘GaAs单晶的器件研究 193
C 外延篇 198
C（1） 气相外延（VPE）、液相外延（LPE）材料 198
C（1）1 VAPOUR PHASE EPITAXIAL GROWTH OF HIGH PURITY GaAs WITH THE AsC13-Ga-N2 SYSTEM 200
C（1）2 EPITAXIAL GROWTH OF HIGH PURITY GaAs IN AN ARGON ATMOSPHERE 208
C（1）3 GROWTH AND PROPERTIES OF HIGH PURITY LPE-GaAs 213
C（1）4 LIQUID PHASE EPITAXY GROWTH AND PROPERTIES OF GaInAsSb/AlGaAsSb/GaSb HETEROSTRUCTURES 224
C（1）5 CHANNELING ANALYSIS OF SELF-IMPLANTED AND RECRYSTALLIZED SILICON ON SAPPHIRE 232
C（2） 离子束外延（IBE）材料 235
C（2）1 CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION BEAM SYSTEM 237
C（2）2 STUDY ON PREPARATION OF GaN and CoSi2 EPITAXIAL FILMS BY MASS ANALYZED LOW ENERGY DUAL ION BEAM EPITAXY 244
C（2）3 HIGH QUALITY CeO2 FILM GROWN ON Si（111）SUBSTRATE BY USING LOW ENERGY DUAL ION BEAM DEPOSITION TECHNOLOGY 248
C（2）4 GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM 251
C（2）5 用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究 256
C（3） 金属有机化学气相淀积（MOCVD）材料 260
C（3）1 THE INFLUENCE OF THICKNESS ON PROPERTIES OF GaN BUFFER LAYER AND HEAVILY Si-DOPED GaN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY 261
C（3）2 THE DEPENDENCE OF GROWTH RATE OF GaN BUFFER LAYER ON GROWTH PARAMETERS BY METALORGANIC VAPOR-PHASE EPITAXY 266
C（3）3 GaN m-i-n LED GROWN BY MOVPE 272
C（3）4 GROWTH OF GaSb AND GaAsSb IN THE SINGLE PHASE REGION BY MOVPE 277
C（3）5 r-Al2O3/Si（100）薄膜高真空MOCVD异质外延生长 284
C（4） 分子束外延（MBE）材料 288
C（4）1 EXCESS ARSENIC IN GaAs GROWN AT LOW TEMPERATURES BY MOLECULAR BEAM EPITAXY 289
C（4）2 INTRABAND ABSORPTION IN THE 8－12 μm BAND FROM Si-DOPED VERTICALLY ALIGNED InGaAs/GaAs QUANTUM-DOT SUPERLATTICE 293
C（4）3 STRUCTURAL CHARACTERIZATION OF InGaAs/GaAs QUANTUM DOTS SUPERLATTICE INFRARED PHOTODETECTOR STRUCTURES 298
C（4）4 GAS SOURCE MOLECULAR BEAM EPITAXY OF HIGH-QUALITY STRAINED Si1-XGeX/Si SUPERLATTICE MATERILAS 306
C（4）5 INFLUENCE OF CRYSTAL PERFECTION ON THE REVERSE LEAKAGE CURRENT OF THE SiGe/Si p-n HETEROJUNCTION DIODES 309
C（4）6 气态源分子束外延GeSi合金中的低温生长动力学研究 314
C（4）7 GSMBE生长掺杂Si及GeSi/Si合金及其电学性质研究 318
C（4）8 GSMBE原位生长SiGe HBT材料 324
C（4）9 ELECTRICAL PROPERTIES OF GaN DEPOSITED ON NITRIDATED SAPPHIRE BY MOLECULAR BEAM EPITAXY USING NH3 CRACKED ON THE GROWING SURFACE 328
C（4）10 FERMI-EDGE SINGULARITY OBSERVED IN A MODULATION-DOPED AlGaN/GaN HETEROSTRUCTURE 332
C（4）11 p-TYPE CO-DOPING STUEY OF GaN BY PHOTOLUMINESCENCE 336
C（4）12 THE EFFECT OF BURIED Alx Ga1-x N ISOLATING LAYERS ON THE TRANSPORT PROPERTIES OF GaN DEPOSITED ON SAPPHIRE SUBSTRATE BY MOLECULAR BEAM EPITAXY USING NH3 340
C（4）13 HYDROGEN CONTAMINANT AND ITS CORRELATION WITH BACKGROUND ELECTRONS IN GaN 344
C（4）14 GSMBE CaN膜的电子输运性质研究 350
C（4）15 THE GROWTH OF SiC ON Si SUBSTRATES WITH C2H4 AND Si2H6 356
C（4）16 THE EFFECTS OF CARBONIZED BUFFER LAYER ON THE GROWTH OF SiC ON Si 364
C（4）17 Si（100）面上3C-SiC的生长 368
C（4）18 SiC单晶的生长及其器件研制进展 372
C（5） 纳米材料 379
C（5）1 NEW OBSERVATION ON THE FORMATION OF PBS CLUSTERS IN ZEOLITE-Y 379
C（5）2 THERMOLUMINESCENCE OF ZnS NANOPARTICLES 383
C（5）3 PHOTOSTIMULATED IUMINESCENCE OF AgI CLUSTERS IN ZEOLITE-Y 389
D 物理篇 396
D1 ON THE CORRELATION BETWEEN HIGH-ORDER BANDS AND SOME PHOTOLUMINESCENCE LINES IN NEUTRON-IRRADIATED FZ SILICON 397
D2 NEUTRON IRRADIATION-INFRARED BASED MEASUREMENT METHOD FOR INTERSTITIAL OXYGEN IN HEAVILY BORON-DOPED SILICON 405
D3 DETERMINATION OF INTERSTITIAL OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON BY COMBINATION OF NEUTRON IRRADIATION AND FTIR 410
D4 LOW-TEMPERATURE（10 K）INFRARED MEASUREMENT OF INTERSTITIAL OXYGEN IN HEAVILY ANTIMONY-DOPED SILICON VIA WAFER THINNING 415
D5 硅中“氢－缺陷络合物”施主行为的研究 420
D6 PHOTOCONDUCTIVITY AND ABSORPTION IN a-Si：Cl：H FILMS 431
D7 DEPENDENCE OF THE GAP ON HYDROGEN CONTENT IN a-Si：H 435
D8 PHOTON ENERGY DEPENDENCE OF SW EFFECT IN α-Si：H FILMS 443
D9 氢对氢化无定形硅能隙的影响 446
D10 BACKGATING AND LIGHT SENSITIVITY IN GaAs METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTORS 453
D11 SIDEGATING EFFECT ON SCHOTTKY CONTACT IN ION-IMPLANTED GaAs 459
D12 INFLUENCE OF THE SEMI-INSULATING GaAs SCHOTTKY PAD ON THE SCHOTTKY BARRIER IN THE ACTIVE LAYER 462
D13 INTERFACE ROUGHNESS SCATTERING IN GaAs-AlGaAs MODULATION-DOPED HETEROSTRUCTURES 466
D14 INFLUENCE OF DX CENTERS IN THE Alx Ga1-x AS BARRIER ON THE LOW-TEMPERATURE DENSITY AND MOBILITY OF THE TWO-DIMENSIONAL ELECTRON GAS IN GaAs/AlGaAs MODULATION-DOPED HETEROSTRUCTURE 471
D15 MAGNETOSPECTROSCOPY OF BOUND PHONONS IN HIGH PURITY GaAs 476
D16 PROPERTIES OF GaAs SINGLE CRYSTALS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURES 482
D17 高纯外延GaAs中浅施主杂质的光热电离谱研究 488
后记 495