SOI——纳米技术时代的高端硅基材料进展 1
纳米技术时代的高端硅基材料——SOI、sSOI和GOI&林成鲁，刘卫丽，陈猛 3
SOI技术的发展动态&林成鲁 17
硅基光电子材料和器件的进展和发展趋势&余金中 33
Fabrication of SiGe-on-insulator and applications for strained Si&Chenglu Lin,Weili Liu,Zhenghua An,Zengfeng Di,Miao Zhang 42
Overview of SOI materials technology in China&M.Chen,X.Wang,C.L.Lin 51
SOI新材料的制备科学 59
以注氧隔离（SIMOX）技术制备高阻SOI材料&骆书华，张苗，陈猛，林成鲁 61
硅中注H＋引起的缺陷和应力以及剥离的机制&多新中，吴雁军，张苗，林成鲁 76
以AIN为绝缘埋层的新结构SOAN材料&朱鸣，门传玲，丁艳芳，P.K.Chu，林成鲁 86
多孔硅外延层转移技术制备SOI材料&刘卫丽，林成鲁 99
ELTRAN技术制备双埋层SOIM新结构&谢欣云，刘卫丽，林成鲁 106
SOI新结构——SOI研究的新动向&谢欣云，林青，门传玲，安正华，张苗，林成鲁 117
Fabrication of silicon-on-AIN novel structure and its residual strain characterization&Zhenghua An,Chuanling Men,Xinyun Xie,Miao Zhang,Paul K.Chu,Chenglu Lin 126
Buried tungsten silicide layer in silicon on insulator substrate by Smart-cut&S.H.Luo,W.L.Liu,M.Zhang,Z.F.Di,S.Y.Wang,Z.T.Song,C.L.Lin,S.C.Zou 135
Void-free low-temperature silicon direct-bonding technique using plasma activation&Xiaobo Ma,Weili Liu,Zhitang Song,Wei Li,Chenglu Lin 143
Microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on P+ porous silicon&Weili Liu,Xinying Xie,Miao Zhang,Qinwo Shen,Chenglu Lin,Lumin Wang,Paul K.Chu 157
Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon&Ming Zhu,Paul K.Chu,Xuejie Shi,Man Wong,Weili Liu,Chenglu Lin 169
Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator&Zengfeng Di,Anping Huang,Ricky K.Y.Fu,Paul K.Chu,Lin Shao,T.H？chbauer,M.Nastasi,Miao Zhang,Weili Liu,Qinwo Shen,Suhua Luo,Zhitang Song,Chenglu Lin 177
Study of SOI substrates incorporated with buried MoSi2 layer&Chao Chen,Weili Liu,Xiaobo Ma,Zhitang Song,Chenglu Lin 189
SOI材料与器件特有的物理效应 199
SOI MOSFET浮体效应研究&朱鸣，林成鲁 201
SOI MOSFET的自加热效应研究&朱鸣，林青，丁艳芳，林成鲁 218
SOI器件的辐射效应及其在抗辐射电子学方面的应用进展&张正选，林成鲁 237
Evolution of hydrogen and helium co-implanted single-crystal 368
silicon during annealing&Xinzhong Duo,Weili Liu,Miao Zhang,Lianwei Wang,Chenglu Lin,M.Okuyama,M.Noda,Wing-Yiu Cheung,S.P.Wong,Paul K.Chu,Peigang Hu,S.X.Wang,L.M.Wang 247
Comparison between the different implantation orders in H+ and He+ co-implantation&Xinzhong Duo,Weili Liu,Miao Zhang,Lianwei Wang,Chenglu Lin,M.Okuyama,M.Noda,Wing-Yiu Cheung,Paul K.Chu,Peigang Hu,S.X.Wang,L.M.Wang 264
Comparison of Cu gettering to H+ and He+ implantation-induced cavities in separation-by-implantation-of-oxygen wafers&Miao Zhang,Chenglu Lin,Xinzhong Duo,Zixin Lin,Zuyao Zhou 277
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen&Miao Zhang,Xuchu Zeng,Paul K.Chu,R.Scholz,Chenglu Lin 287
SGOI新结构和应变硅的制备科学 301
SIMOX技术制备SGOI新结构的研究&安正华，林成鲁，张苗，Paul K.Chu 303
改良型Ge浓缩技术制备SGOI及应变Si的研究&狄增峰，张苗，林成鲁，Paul K.Chu 328
绝缘层上锗材料的研究&刘卫丽，詹达，马小波，宋志棠，林成鲁 345
Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure&Zhenghua An,Yanjun Wu,Miao Zhang,Zengfeng Di,Chenglu Lin,Ricky K.Y.Fu,Peng Chen,Paul K.Chu,W.Y.Cheung,S.P.Wong 351
Germanium movement mechanism in SiGe-on-insulator fabricated by modified Ge condensation&Zengfeng Di,Paul K.Chu,Miao Zhang,Weili Liu,Zhitang Song,Chenglu Lin 359
Investigation of relaxed SiGe on insulator and strained Si&Weili Liu,Chenglu Lin,Zengfeng Di,Zhitang Song,Paul K.Chu 368
SOI技术的若干应用研究 375
纳米MOSFET/SOI器件新结构&张正选，林成鲁 377
SOI衬底上的无源器件研究&骆苏华，张苗，刘卫丽，孙晓炜，林成鲁 384
SGOI衬底上高k栅介质的研究&狄增峰，张苗，P.K.Chu，刘卫丽，林成鲁 405
High frequency capacitance-voltage characterization of Al2 O3/ZrO2/Al2O3 in fully depleted silicon-on-insulator metal-oxide-semiconductor capacitors&N.L.Zhang,Z.T.Song,Q.W.Shen,Y.J.Wu,Q.B.Liu,C.L.Lin,X.Z.Duo,L.R.Zheng,Y.F.Ding,Z.Q.Zhu 420
Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate&Ming Zhu,Peng Chen,Ricky K.-Y.Fu,Zhenghua An,Chenglu Lin,Paul K.Chu 426
Sil-x Gex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3μm&Cheng Li,Qinqing Yang,Hongjie Wang,Jialian Zhu,Liping Luo,Jinzhong Yu,Qiming Wang,Yongkang Li,Junming Zhou,Chenglu Lin 437
Total dose rad-hard improvement for silicon-on-insulator materials by modifying the buried oxide with ion implantation&Zhang En-Xia,Qian Cong,Zhang Zheng-Xuan,Lin Cheng-Lu,Wang Xi,Wang Ying-Min,Wang Xiao-He,Zhao Gui-Ru,En Yun-Fei,Luo Hong-Wei,Shi Qian 443
Investigation of H+ and B+ /H+ implantation in LiTaO3 single-crystals&Qing Wan,Lianwei Wang,Weili Liu,Miao Zhang,Chenglu Lin 454
Investigation of SOI substrates incorporated with buried MoSi2 for high frequency SiGe HBTs&Chen Chao,Liu Weili,Ma Xiaobo,Shen Qinwo,Song Zhitang,Lin Chenglu 462