《硅加工中的表征 英文》PDF下载

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  • 作  者:(美)布伦德尔,(美)埃文斯,(美)斯特劳瑟主编
  • 出 版 社:哈尔滨:哈尔滨工业大学出版社
  • 出版年份:2014
  • ISBN:9787560342801
  • 页数:240 页
图书介绍:硅加工中的表征一书综述了硅加工工程师所感兴趣的表征技术。日益严格的材料要求,比如降低阻挡层厚度,促进了对提高材料质量与性能的需求。为了满足这些高标准,加工工程师必须对微结构的先进表征技术及表面制备和沉积技术与微结构的关系有足够的了解。这本书涵盖了表征的最新进展,包括:检测表面清洁过程的有效性如形貌、残留物、化学反应;确定在硅基体上生长硅化物与阻挡层过程中硅的消耗量;检测铝基体上晶粒的生长与晶粒尺寸——对于电迁移效应与光刻非常重要;以及硅的选择性外延生长。

APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH 1

1.1 Introduction 1

1.2 Silicon Epitaxial Growth 2

Basic Chemical Reactions 2

Precleaning Considerations 3

Reactor Types 3

1.3 Film and Process Characterization 4

Crystal Quality 4

Preclean Quality 6

Thickness 9

Dopant Concentration and Dopant Profiling 12

1.4 Selective Growth 14

Basic Process Considerations 14

Defect Density and Growth Morphology 15

Preclean Quality 18

Thickness 18

1.5 Si1-xGex Epitaxial Growth 18

Material Considerations 18

Reactor Types 19

1.6 Si1-xGex Material Characterization 20

Composition and Thickness 20

Growth Morphology 22

Lattice Strain and Critical Thickness 23

Relaxation Kinetics 24

Bandgap Measurements 24

Interfacial Abruptness and Outdiffusion 25

Impurity Profiles 25

1.7 Summary 26

POLYSILICON CONDUCTORS 32

2.1 Introduction 32

2.2 Deposition 33

Surface Preparation 34

Nucleation and Growth 35

Postgrowth Analysis 38

High-Quality Polysilicon 42

Integrated Circuit Fabrication Issues 43

2.3 Doping 45

Dopant Distribution 45

Deglaze 46

Ion Implantation Doping 46

2.4 Patterning 47

Lithography 47

Etching 47

2.5 Subsequent Processing 48

Polycides 48

Dielectric Encapsulation 49

SILICIDES 53

3.1 Introduction 53

3.2 Formation of Silicides 57

Sheet Resistance Measurements 57

Rutherford Backscattering Measurements 60

X-Ray Diffraction Measurements 72

Ellipsometric Measurements 74

3.3 The Silicide-Silicon Interface 76

3.4 Oxidation of Silicides 82

3.5 Dopant Redistribution During Silicide Formation 84

3.6 Stress in Silicides 87

3.7 Stability of Silicides 90

3.8 Summary 92

ALUMINUM-AND COPPER-BASED CONDUCTORS 96

4.1 Introduction 96

History 96

4.2 Film Deposition 98

Techniques 98

Problems with Deposition 101

4.3 Film Growth 104

Substrate Surface Properties 104

Surface Preparation 107

Film Formation 108

Microstructure 110

Patterning and Etching 110

4.4 Encapsulation 113

4.5 Reliability Concerns 114

TUNGSTEN-BASED CONDUCTORS 121

5.1 Applications for ULSI Processing 121

5.2 Deposition Principles 122

5.3 Blanket Tungsten Deposition 123

Film Thickness 123

Film Conformality 124

Film Resistivity 124

Film Stress 125

Surface Roughness 126

Film Microstructure 127

5.4 Selective Tungsten Deposition 127

Selectivity Breakdown 129

Substrate Interaction 131

BARRIER FILMS 138

6.1 Introduction 138

6.2 Characteristics of Barrier Films 139

6.3 Types of Barrier Films 140

6.4 Processing Barrier Films 140

Inert Sputtering 141

Reactive Sputtering 141

Chemical Vapor Deposition 142

Nitridation and Rapid Thermal Annealing 143

6.5 Examples of Barrier Films 143

Titanium Thin Films 144

Tungsten-TitaniumThin Films 149

Titanium Nitride 151

6.6 Summary 163

APPENDIX: TECHNIQUE SUMMARIES 169

1 Auger Electron Spectroscopy(AES) 169

2 Ballistic Electron Emission Microscopy(BEEM) 170

3 Capacitance-Voltage(C-V)Measurements 177

4 Deep Level Transient Spectroscopy(DLTS) 179

5 Dynamic Secondary Ion Mass Spectrometry(Dynamic SIMS) 181

6 Electron Beam Induced Current(EBIC) Microscopy 182

7 Energy-Dispersive X-Ray Spectroscopy(EDS) 188

8 Focused Ion Beams(FIBs) 189

9 Fourier Transform Infrared Spectroscopy(FTIR) 193

10 Hall Effect Resistivity Measurements 194

11 Inductively Coupled Plasma Mass Spectrometry(ICPMS) 196

12 Light Microscopy 197

13 Low-Energy Electron Diffraction(LEED) 198

14 Neutron Activation Analysis(NAA) 199

15 Optical Scatterometry 200

16 Photoluminescence(PL) 201

17 Raman Spectroscopy 202

18 Reflection High-Energy Electron Diffraction(RHEED) 203

19 Rutherford Backscattering Spectrometry(RBS) 204

20 Scanning Electron Microscopy(SEM) 205

21 Scanning Transmission Electron Microscopy(STEM) 206

22 Scanning Tunneling Microscopy and Scanning Force Microscopy(STM and SFM) 207

23 Sheet Resistance and the Four Point Probe 208

24 Spreading Resistance Analysis(SRA) 217

25 Static Secondary Ion Mass Spectrometry(Static SIMS) 225

26 Surface Roughness:Measurement Formation by Sputtering,Impact on Depth Profiling 226

27 Total Reflection X-Ray Fluorescence Analysis(TXRF) 227

28 Transmission Electron Microscopy(TEM) 228

29 Variable-Angle Spectroscopic Ellipsometry(VASE) 229

30 X-Ray Diffraction(XRD) 230

31 X-Ray Fluorescence(XRF) 231

32 X-Ray Photoelectron Spectroscopy(XPS) 232

Index 233