《半导体数据手册 下 英文》PDF下载

  • 购买积分:19 如何计算积分?
  • 作  者:(德)马德朗主编
  • 出 版 社:哈尔滨:哈尔滨工业大学出版社
  • 出版年份:2014
  • ISBN:9787560345154
  • 页数:691 页
图书介绍:本手册内容涉及:四面体键的化合物特性的实验数据,三、四、五、六族元素特性的实验数据,各族元素的二元化合物特性的实验数据,各族元素的三元化合物特性的实验数据以及硼,过渡金属和稀土化合物半导体特性的实验数据等主要方面,以及相关材料的晶体结构、电学特性、晶格属性、传输特性、光学特性、杂志和缺陷等。对于必要的背景知识和近期的发展均有较为完整和详细的阐述,适合不同层次的群体用于学习和研究。其中F部分由于数据量较大,附有光盘。本册23章包括更多元素,更多二元化合物,更多三元化合物。

C Further elements 397

11 Group Ⅲ elements 397

11.0 Crystal structure and electronic structure of boron 397

11.1 Physical properties of boron 399

12 Group Ⅴ elements 404

12.0 Crystal structure and electronic structure 404

12.1 Phosphorus(P) 407

12.2 Arsenic(As) 409

12.3 Antimony(Sb) 412

12.4 Bismuth(Bi) 415

13 Group Ⅵ elements 419

13.0 Crystal structure and electronic structure 419

13.1 Sulfur(S) 422

13.2 Selenium(Se) 424

13.3 Tellurium(Te) 429

D Further binary compounds 434

14 IAx-IBy compounds 434

14.0 Crystal structure and electronic structure 434

14.1 CsAu 434

14.2 RbAu 436

15 Ⅰx-Ⅴy compounds 437

15.0 Crystal structure and electronic structure 437

15.1 Ⅰ-Ⅴ compounds(NaSb,KSb,RbSb,CsSb) 440

15.2 Ⅰ3-Ⅴ compounds 441

15.2.1 Lattice parameters and melting temperatures 441

15.2.2 Li3Sb,Li3Bi 442

15.2.3 Na3Sb 442

15.2.4 K3Sb 442

15.2.5 Rb3Sb 443

15.2.6 Cs3Sb 443

15.2.7 Rb3Bi,Cs3Bi 444

15.3 Ⅰ2-Ⅰ-Ⅴ compounds 444

15.3.1 Na2KSb 444

15.3.2 K2CsSb 444

15.3.3 Na2RbSb,Na2CsSb,K2RbSb,Rb2CsSb 445

16 Ⅰx-Ⅵy compounds 446

16.0 Crystal structure and electronic structure 446

16.1 Cupric oxide(CuO) 449

16.2 Cuprous oxide(Cu2O) 451

16.3 Copper sulfides(Cu2S,Cu2-xS) 454

16.4 Copper selenides(Cu2Se,Cu2 xSe) 456

16.5 Copper tellurides(Cu2Te,Cu2-xTe) 457

16.6 Silver oxides(AgxOy) 458

16.7 Silver sulfide(Ag2S) 459

16.8 Silver selenide(Ag2Se) 461

16.9 Silver telluride(Ag2Te) 462

17 Ⅱx-Ⅳy compounds 464

17.0 Crystal structure and electronic structure 464

17.1 Magnesium silicide(Mg2Si) 465

17.2 Magnesium germanide(Mg2Ge) 468

17.3 Magnesium stannide(Mg2Sn) 470

17.4 Magnesium plumbide(Mg2Pb) 473

17.5 Ca2Si,Ca2Sn,Ca2Pb 475

17.6 BaSi2,BaGe2,SrGe2 475

18 Ⅱx-Ⅴy compounds 476

18.0 Crystal structure and electronic structure 476

18.1 Magnesium arsenide(Mg3As2) 480

18.2 Zinc phosphide(Zn3P2) 481

18.3 Zinc arsenide(Zn3As2) 483

18.4 Cadmium phosphide(Cd3P2) 485

18.5 Cadmium arsenide(Cd3As2) 488

18.6 Zinc phosphide(ZnP2) 490

18.7 Zinc arsenide(ZnAs2) 493

18.8 Cadmium phosphide(CdP2) 495

18.9 Cadmium arsenide(CdAs2) 497

18.10 Cadmium tetraphosphide(CdP4) 499

18.11 Zinc antimonide(ZnSb) 500

18.12 Cadmium antimonide(CdSb) 501

18.13 Zinc antimonide(Zn4Sb3) 503

18.14 Cadmium antimonide(Cd4Sb3) 504

18.15 Cd7P10 505

18.16 Cd6P7 505

19 Ⅱ-Ⅶ2 compounds 507

19.0 Crystal structure and electronic structure 507

19.1 Cadmium dichloride(CdCl2) 509

19.2 Cadmium dibromide(CdBr2) 509

19.3 Cadmium diiodide(CdI2) 510

19.4 Mercury diiodide(HgI2) 512

20 Ⅲx-Ⅵy compounds 515

20.0 Crystal structure and electronic structure 515

20.1 Gallium sulfide(GaS) 520

20.2 Gallium selenide(GaSe) 523

20.3 Gallium telluride(GaTe) 527

20.4 Indium sulfide(InS) 529

20.5 Indium selenide(InSe) 530

20.6 Indium telluride(InTe) 533

20.7 Thallium sulfide(TlS) 535

20.8 Thallium selenide(TlSe) 536

20.9 Thallium telluride(TlTe) 538

20.10 In6S7 539

20.11 In4Se3 540

20.12 In6Se7 540

20.13 In6oSe4o 541

20.14 In5oSe50 542

20.15 In40 Se60 542

20.16 In5Se6 542

20.17 In4Te3 543

20.18 Tl5Te3 543

20.19 TlGaS2 543

20.20 TlGaSe2 545

20.21 TlGaTe2 547

20.22 TlInS2 548

20.23 TlInSe2 550

20.24 TlInTe2 551

21 Ⅲ-Ⅶ compounds 553

21.0 Crystal structure and electronic structure 553

21.1 Thallium fluoride(TlF) 555

21.2 Thallium chloride(TlCl) 556

21.3 Thallium bromide(TlBr) 558

21.4 Thallium iodide(TlI) 561

22 Ⅳ-Ⅴ compounds 563

22.0 Crystal structure and lattice parameters 563

22.1 SiP,GeP 564

22.2 SiAs 564

22.3 GeAs 565

22.4 SiP2,SiAs2 565

22.5 GeAs2 565

23 Ⅳx-Ⅵy compounds 566

23.0 Crystal structure and electronic structure 566

23.1 Germanium sulfide(GeS) 572

23.2 Germanium selenide(GeSe) 574

23.3 Germanium telluride(GeTe) 576

23.4 Tin sulfide(SnS) 578

23.5 Tin selenide(SnSe) 580

23.6 Tin telluride(SnTe) 582

23.7 Lead monoxide(PbO) 585

23.8 Lead sulfide(PbS) 586

23.9 Lead selenide(PbSe) 588

23.10 Lead telluride(PbTe) 590

23.11 Germanium dioxide(GeO2) 593

23.12 Germanium disulfide(GeS2) 595

23.13 Germanium diselenide(GeSe2) 596

23.14 Tin dioxide(SnO2) 597

23.15 Tin disulfide(SnS2) 600

23.16 Tin diselenide(SnSe2) 602

23.17 Si2Te3 603

23.18 Sn2S3,PbSnS3,SnGeS3,PbGeS3 605

24 Ⅳ-Ⅶ2 compounds 606

24.0 Crystal structure 606

24.1 Lead difluoride(PbF2) 606

24.2 Lead dichloride(PbCl2) 608

24.3 Lead dibromide(PbBr2) 609

24.4 Lead diiodide(PbI2) 610

25 Ⅴx-Ⅵy compounds 613

25.0 Crystal structure and electronic structure 613

25.1 Arsenic oxide(As2O3) 617

25.1 Arsenic oxide(As2O3) 617

25.2 Arsenic sulfide(As2S3) 617

25.3 Arsenic selenide(As2Se3) 619

25.4 Arsenic telluride(As2Te3) 620

25.5 Antimony sulfide(Sb2S3) 621

25.6 Antimony selenide(Sb2Se3) 622

25.7 Antimony telluride(Sb2Te3) 624

25.8 Bismuth oxide(Bi2O3) 626

25.9 Bismuth sulfide(Bi2S3) 627

25.10 Bismuth selenide(Bi2Se3) 628

25.11 Bismuth telluride(Bi2Te3) 630

25.12 Realgar(As4S4) 633

26 Ⅴ-Ⅶ3 compounds 634

26.0 Crystal structure and electronic structure 634

26.1 Arsenic triiodide(AsI3) 635

26.2 Antimony triiodide(SbI3) 636

26.3 Bismuth triiodide(BiI3) 637

E Further ternary compounds 640

27 Ⅰx-Ⅳy-Ⅵz compounds 640

27.0 Crystal structure 640

27.1 Ag8GeS6(argyrodite) 641

27.2 Ag8SnS6(canfieldite) 641

27.3 Ag8SiSe6 642

27.4 Ag8GeSe6 642

27.5 Ag8SnSe6 643

27.6 Ag8GeTe6 643

27.7 Cu8GeS6 644

27.8 Cu8GeSe6 644

27.9 Cu4Ge3S5,Cu4Ge3Se5 and Cu4Sn3Se5 644

27.10 Cu4SnS4 644

28 Ix-Ⅴy-Ⅵz compounds 645

28.0 Crystal structure and electronic structure 645

28.1 AgAsS2 646

28.2 AgAsSe2 646

28.3 AgAsTe2 647

28.4 AgSbS2 647

28.5 AgSbSe2 647

28.6 AgSbTe2 648

28.7 AgBiS2 648

28.8 AgBiSe2 649

28.9 AgBiTe2 649

28.10 CuSbSe2 650

28.11 CuSbTe2 650

28.12 CuBiSe2 651

28.13 CuBiTe2 651

28.14 Ag3AsS3 651

28.15 Ag3SbS3 652

29 Ⅱx-Ⅲy-Ⅵz compounds 653

29.0 Crystal structure of Ⅱ-Ⅲ-Ⅵ2 compounds 653

29.1 CdInS2 653

29.2 CdInSe2 654

29.3 CdInTe2 654

29.4 CdTlS2 655

29.5 CdTlSe2 655

29.6 CdTlTe2 656

29.7 HgTlS2 656

30 Ⅲx-Ⅴy-Ⅵz comPounds 657

30.0 Crystal structure of Ⅲ-Ⅴ-Ⅵ2 compounds 657

30.1 TlAsS2 657

30.2 TlSbS2 657

30.3 TlBiS2 658

30.4 TlBiSe2 658

30.5 TlBiTe2 659

30.6 Ga6Sb5Te 659

30.7 In6Sb5Te 659

30.8 In7SbTe6 660

31 Ⅳx-Ⅴy-Ⅵz compounds 661

31.0 Crystal structure 661

31.1 Bi12SiO20 661

31.2 Bi12GeO20 662

31.3 PbSb2S4,GeSb2Te4,GeBi2Te4,SnBi2Te4 662

31.4 GeBi4Te7,GeSb4Te7,PbBi4Te7 663

32 Ⅴ-Ⅵ-Ⅶ compounds 665

32.0 Crystal structure and electronic structure 665

32.1 AsSBr 666

32.2 SbSI 666

32.3 SbSBr 669

32.4 SbSeBr 669

32.5 SbSeI 669

32.6 SbTeI 670

32.7 BiOCl 670

32.8 BiOBr 670

32.9 BiOI 671

32.10 BiSCl 671

32.11 BiSBr 671

32.12 BiSI 671

32.13 BiSeBr 672

32.14 BiSeI 672

32.15 BiTeBr 672

32.16 BiTeI 673

33 Further ternary compounds 674

33.1 Cu3In5Se9 674

33.2 Cu3Ga5Se9 674

33.3 Ag3In5Se9 675

33.4 Ag3Ga5Se9 675

33.5 Cu2Ga4Te7 675

33.6 Cu2In4Te7 676

33.7 CuIn3Te5 676

33.8 AgIn3Te5 677

33.9 AgIn5S8 677

33.10 AgIn9Te14 677

33.11 Cd2SnO4 677

33.12 CdSnO3 678

33.13 Li3CuO3 678

33.14 Hg3PS3,Hg3PS4 678

33.15 Cd4(P,As)2(Cl,Br,I)3 678

F Boron,transition metal and rare earth compounds with semiconducting properties(data only on the enclosed CD-ROM) 679

G Index of substances 680

1 Index of substances for chapters 1...33 680

2 Index of substances for chapters 34...38 685