王阳元文集 第3辑PDF电子书下载

科学与人生 3

从教50年述怀 3

理想是人生的甘露，奋斗是不老的诗情——谈科学与人生 6

机遇·使命·创新·人生 32

战略研究 73

信息技术是新的经济发展引擎 73

进入“硅石时代”——21世纪集成电路产业与微电子科学技术的发展 77

集成电路产业及其科学技术的发展面临着新的历史性突破 81

十年磨一剑——集成电路产业历史回顾和发展规律探讨 96

科技创新与机制创新推动社会跨越式发展 106

关键在于营造有利于创新的机制和环境——对《国家中长期科学和技术发展规划纲要》中集成电路专项实施的讨论 109

集成电路50年——发明、发展、面临新的突破和我们的历史机遇 112

科学研究方法论及人才培养 131

关于美国加州伯克莱大学学术活动情况和加强学术活动的几点建议 131

科技创新的社会条件和人才培养 134

立足客观需求，着眼科学前沿，努力引领发展，培养高端人才——纪念我校微电子学科建设30年 137

教育改革的探索与实践——庆祝北京大学软件与微电子学院成立十周年的讲话 154

“心怀芯，天地宽”——在北京大学信息工程学院成立十周年庆典上的讲话 158

前沿综述 167

SOI技术与三维立体集成电路 167

展望九十年代世界高科技发展——微电子将是国际科技竞争的关键 199

Challenges of Process Technology in 32nm Technology Node 200

32nm及其以下技术节点CMOS技术中的新工艺及新结构器件 232

The Neo-industrialization and Integrated Circuits Industry in the Mainland of China 247

The driving force for development of IC and system in future： Reducing the power consumption and improving the ratio of performance to power consumption 281

学术论文 313

一、器件与工艺 313

新型SON器件的自加热效应 313

Silicon-on-nothing MOSFETs fabricated with hydrogen and helium co-implantation 321

LaAlO3 as tunnel dielectric for low-voltage and low-power p-channel flash memory free of drain disturb 330

Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs 340

A comparative study on analog/RF performance of UTB GOI and SOI devices 349

The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique 363

High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator 370

Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction 378

Process optimization of plasma nitridation SiON for 65nm node gate dielectrics 387

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage 397

A TaOx based Threshold Switching Selector for the RRAM Crossbar Array Memory 404

Experimental Study on the Variation of NBTI Degradation in Nano-scaled High-K/Metal-gate PFETs 410

Design of A 3-5-GHz ultrawideband BiFET mixer using 0.35-μm SiGe BiCMOS technology 417

二、电路与系统 425

A Programmable Spread Spectrum Clock Generation 425

A Low-Voltage Voltage Doubler without Body Effect 431

A Physics-Based Equivalent-Circuit Model for On-Chip Symmetric Transformers With Accurate Substrate Modeling 438

A PVT Tolerant 10 to 500MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO 458

Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps 472

Characteristics of Gas Flow within a Micro Diffuser/Nozzle Pump 500

A New Test Data Compression Scheme for Multi-scan Designs 508

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process 522

An ESD-Aware 2.4GHz PA Design for WLAN Application 541