华年日拾 梁骏吾院士80华诞记怀PDF电子书下载

学术论文 3

Investigation of Heterostructure Defects for LPE Ga1-χA1…As/GaAs 3

Investigation of N-doped FZ Si Crystals 12

The Interaction Between Impurities and Defects in Semiconductors 15

Behaviors of Dislocations During Sl’s Growth and Crystal Quality Assessment 19

Thermodynamic and Fluid Dynamic Analyses of GaAs Movpe Process 25

Photoluminescence Spectrum Study of the GaAs/Si Epilayer Grown by using a Thin Amorphous Si Film as Buffer Layer 32

Dissociated Screw Dislocation Which Can Relieve Strain Energy in the Epitaxial Layer of GeSi on Si （001） 37

Hrtem Study of Dislocations in GeSi/Si Heterostructures Grown by VPE 43

Kinetics and Transport Model for the Chemical Vapor Epitaxy of GχSi1-χ 47

The Dependence of GeχSi1-χEpitaxial Growth on GeH4 Flow Using Chemical Vapour Deposition 57

Physical Properties and Growth of SiC 62

Study on Photoluminescence Spectra of SiC 69

Raman Study on Residual Strains in Thin 3C-SiC Epitaxial Layers Grown on Si （001） 76

Investigation of｛111｝A and｛111｝B Planes of c-GaN Epilayers Grown on GaAs（001）by MOCVD 83

Microtwins and Twin Inclusions in the 3C-SiC Epilayers grown on Si （001）by APCVD 89

Determination of Structure and Polarity of SiC Single Crystal by X-Ray Diffraction Technique 95

Is Thin-Film Solar Cell Technology Promising？ 101

Optical and Electrical Properties of GaN：Mg Grown by MOCVD 121

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 127

Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical VapourDeposition 133

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 140

Abatement of Waste Gases and Water During the Processes of Semiconductor Fabrication 148

Control of Arsenic Pollution from Waste Gases During Fabrication of Semiconductor 156

О летучести окиси бора в гедороде при иаличии водянoro пара 160

О растворимостн кислорода в жидком кремнии 164

直拉硅单晶碳沾污的研究 168

LPE Ga1-χA1χAs/GaAs界面缺陷观察 176

Si-C相图的研究及碳对硅单晶质量的影响 182

掺氮区熔硅单晶深能级的研究 190

Ge在GaAs液相外延中的行为 193

杂质在硅和砷化镓中行为 199

两性杂质锗在LPE GaAs中分凝系数和占位比的计算 210

半导体（目录） 218

水平式矩形硅外延系统的计算机模拟 220

低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析 227

GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量 234

SIPOS膜的结构组成 240

半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测 247

GeSi CVD系统的流体力学和表面反应动力学模型 254

MOVPE生长Ca（CH3）3—AsH3—H2体系中砷的形态转化及砷的治理 261

用固相外延方法制备Si1-χ-Ge.χ Cγ三元材料 266

兴建年产一千吨电子级多晶硅工厂的思考 272

电子级多晶硅的生产工艺 276

中国信息产业领域相关重点基础材料科技发展战略研究 284

中国硅材料工业的前景与挑战 292

半导体硅片生产形势的分析 295

光伏产业面临多晶硅瓶颈及对策 300

“十五”期间中国半导体硅材料发展战略思路和建议 307

薄膜光伏电池中的材料问题 310

降低超大规模集成电路用高纯水中总有机碳的能量传递光化学模型 312

附录 321

附录一 梁骏吾活动年表 321

附录二 梁骏吾获奖情况 325

附录三 所获得的专利目录 327

附录四 学术报告目录 328

附录五 工程院院士建议 330

后记 335