学术论文 3
Investigation of Heterostructure Defects for LPE Ga1-χA1…As/GaAs 3
Investigation of N-doped FZ Si Crystals 12
The Interaction Between Impurities and Defects in Semiconductors 15
Behaviors of Dislocations During Sl’s Growth and Crystal Quality Assessment 19
Thermodynamic and Fluid Dynamic Analyses of GaAs Movpe Process 25
Photoluminescence Spectrum Study of the GaAs/Si Epilayer Grown by using a Thin Amorphous Si Film as Buffer Layer 32
Dissociated Screw Dislocation Which Can Relieve Strain Energy in the Epitaxial Layer of GeSi on Si （001） 37
Hrtem Study of Dislocations in GeSi/Si Heterostructures Grown by VPE 43
Kinetics and Transport Model for the Chemical Vapor Epitaxy of GχSi1-χ 47
The Dependence of GeχSi1-χEpitaxial Growth on GeH4 Flow Using Chemical Vapour Deposition 57
Physical Properties and Growth of SiC 62
Study on Photoluminescence Spectra of SiC 69
Raman Study on Residual Strains in Thin 3C-SiC Epitaxial Layers Grown on Si （001） 76
Investigation of｛111｝A and｛111｝B Planes of c-GaN Epilayers Grown on GaAs（001）by MOCVD 83
Microtwins and Twin Inclusions in the 3C-SiC Epilayers grown on Si （001）by APCVD 89
Determination of Structure and Polarity of SiC Single Crystal by X-Ray Diffraction Technique 95
Is Thin-Film Solar Cell Technology Promising？ 101
Optical and Electrical Properties of GaN：Mg Grown by MOCVD 121
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 127
Growth of AlGaN Epitaxial Film with High Al Content by Metalorganic Chemical VapourDeposition 133
Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 140
Abatement of Waste Gases and Water During the Processes of Semiconductor Fabrication 148
Control of Arsenic Pollution from Waste Gases During Fabrication of Semiconductor 156
О летучести окиси бора в гедороде при иаличии водянoro пара 160
О растворимостн кислорода в жидком кремнии 164
直拉硅单晶碳沾污的研究 168
LPE Ga1-χA1χAs/GaAs界面缺陷观察 176
Si-C相图的研究及碳对硅单晶质量的影响 182
掺氮区熔硅单晶深能级的研究 190
Ge在GaAs液相外延中的行为 193
杂质在硅和砷化镓中行为 199
两性杂质锗在LPE GaAs中分凝系数和占位比的计算 210
半导体（目录） 218
水平式矩形硅外延系统的计算机模拟 220
低压MOCVD生长的InGaAs/InP量子阱的光致发光谱线线宽及量子尺寸效应的测量分析 227
GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量 234
SIPOS膜的结构组成 240
半导体材料与器件生产工艺尾气中砷、磷、硫的治理及检测 247
GeSi CVD系统的流体力学和表面反应动力学模型 254
MOVPE生长Ca（CH3）3—AsH3—H2体系中砷的形态转化及砷的治理 261
用固相外延方法制备Si1-χ-Ge.χ Cγ三元材料 266
兴建年产一千吨电子级多晶硅工厂的思考 272
电子级多晶硅的生产工艺 276
中国信息产业领域相关重点基础材料科技发展战略研究 284
中国硅材料工业的前景与挑战 292
半导体硅片生产形势的分析 295
光伏产业面临多晶硅瓶颈及对策 300
“十五”期间中国半导体硅材料发展战略思路和建议 307
薄膜光伏电池中的材料问题 310
降低超大规模集成电路用高纯水中总有机碳的能量传递光化学模型 312
附录 321
附录一 梁骏吾活动年表 321
附录二 梁骏吾获奖情况 325
附录三 所获得的专利目录 327
附录四 学术报告目录 328
附录五 工程院院士建议 330
后记 335