占“新”为民 兴“材”报国 王占国院士文集PDF电子书下载

第一篇 自传 3

幼年时光 3

插曲 7

初入小学 8

远足与讲演 10

夜“逃”红军 11

崭新的小学生活 12

侯集镇的3年初中生活 14

夜惊 15

雪夜宿房营 16

入伙 18

紧张有趣的课外活动 19

南阳第二高中 20

只身北上南开求学 23

胆战心惊的高等数学课 26

共产主义暑假 27

毛主席视察南开大学 28

3年困难时期的大学生活 29

早期科研工作概述 33

什刹海黑夜救同事 37

天津小站劳动锻炼 38

1978年中国物理学会年会趣事 40

变温霍尔系数测量系统建设 41

留学瑞典隆德大学固体物理系 42

1984年回国后的研究工作 45

第二篇 论著选编 49

硅的低温电学性质 49

Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57

Optical properties of iron doped AlxGal-xAs alloys 62

Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73

Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89

Acceptor associates and bound excitons in GaAs: Cu 95

Localization of excitons to Cu-related defects in GaAs 116

Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128

混晶半导体中深能级的展宽及其有关效应 140

Electronic properties of an electron-attractive complex neutral defect in GaAs 151

硅中金施主和受主光电性质的系统研究 158

A novel model of “new donors” in Czochralski-grown silicon 169

Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177

SI-GaAs单晶热稳定性及其电学补偿机理研究 185

Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195

Simulation of lateral confinement in very narrow channels 201

Theoretical investigation of the dynamic process of the illumination of GaAs 209

Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222

Photoluminescence studies of single submonolayer InAs structures grown on GaAs（001） matrix 234

Influence of DX centers in the AlxGa1-xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure 240

Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247

Ordering along 〈111〉 and 〈100〉 directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259

Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264

808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269

Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275

半导体材料的现状和发展趋势 283

Effects of annealing on self-organized InAs quantum islands on GaAs （100） 285

Wurtzite GaN epitaxial growth on a Si （001）substrate using γ-Al2 O3 as an intermediate layer 291

High-density InAs nanowires realized in situ on（100） InP 298

High power continuous-wave operation of self-organized In （Ga） As/GaAs quantum dot lasers 304

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum 306

Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers 322

Research and development of electronic and optoelectronic materials in China 328

半导体量子点激光器研究进展 339

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080nm 349

Self-assembled quantum dots, wires and quantum-dot lasers 355

Controllable growth of semiconductor nanometer structures 365

Effect of In0.2 Ga0.8 As and In0.2 Al0.8 As combination layer on band offsets of InAs quantum dots 372

信息功能材料的研究现状和发展趋势 380

High-performance quantum-dot superluminescent diodes 395

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 400

Materials science in semiconductor processing 407

半导体照明将触发照明光源的革命 409

Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy 415

Broadband external cavity tunable quantum dot lasers with low injection current density 422

Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432

19 μm quantum cascade infrared photodetectors 442

High-performance operation of distributed feedback terahertz quantum cascade lasers 450

Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456

Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm 474

第三篇 学术贡献 489

忍受辐照伤痛，换来我国空间用硅太阳电池的定型投产 489

挑战国际权威，澄清GaAs和硅中深能级物理本质 491

“863”十年，掌舵我国新型半导体材料与器件发展 494

任“S-863”专家组长，开展新材料领域战略研究 498

任咨询组组长，为“973”材料领域发展做出重要贡献 499

开拓创新，解决“信息功能材料相关基础问题” 501

推动材料基础研究，实施光电信息功能材料重大研究计划 503

第四篇 回忆 507

半导体材料科学实验室的筹建与初期发展历程回顾 507

深情厚谊，历久弥坚 509

王占国院士科研事迹回顾 511

一段往事 514

王占国院士支持南昌大学GaN研究记事 515

我生命中的贵人 517

贺王占国老师80寿辰 519

往事点滴 521

在王占国导师身边的日子 523

我们的大导师王占国院士 526

我眼中的王占国院士 528

德高望重，仰之弥高 529

超宽禁带半导体材料研究组发展历程 531

高山仰止 心念恩师 533

师道山高 535

人生楷模 学习的榜样 537

谆谆教诲 润物无声 539

桃李遍天下 541

记与王老师交往的二三事 544

第五篇 附录 549

个人简历 549

大事记 550

学术交流目录 555

获奖目录 563

论著目录 564

专利目录 610

培养学生简况 618

后记 635