DATA STORAGE AT THE NANOSCALE ADVANCES AND APPLICATIONSPDF电子书下载

1.Overview of Information Data Storage：An Introduction&Gan Fuxi 1

1.1 Importance and Research Aims of Information Data Storage 2

1.2 Development Trends of Different Information Storage Devices 3

1.2.1 In-Line Data Storage 3

1.2.2 Storage Class Memory 5

1.2.3 Magnetic Data Storage 6

1.2.4 Rethinking of Optical Data Storage Development 7

1.3 Nanolithography for Information Storage 9

1.3.1 Characteristics of and Requirements for Nanolithography 9

1.3.2 Nanolithography by Optical Means 9

1.3.3 Advanced Optical Lithography 10

1.4 Fast Phase Change 12

1.4.1 Fast Phase Change Initiated by Ultra-Short Laser Pulse 13

1.4.2 New Application of Phase Change Process in Information Data Storage Field 15

2.Super-Resolution Optical Data Storage Using Binary Optics&Wang Haifeng and Gan Fuxi 19

2.1 Design of the Super-Resolution Binary Optics 20

2.1.1 Binary Optics Design Based on Scalar Diffraction Theory 21

2.1.2 Binary Optics Design Based on Vector Diffraction Theory 23

2.2 Generation of Super-Resolution Longitudinally Polarized Light Beamwith Binary Optics 26

2.3 Application of Binary Optics to Near-Field Recording 28

2.3.1 System Configuration for Circular Polarized Light 28

2.3.2 System Configuration for Longitudinally Polarized Light 31

2.3.3 Near-Field Recording Using Optical Antennas 33

3.Focal Spot Engineering for Bit-by-Bit Recording&Gan Xiaosong and Wu Jingzhi 39

3.1 Introduction 39

3.2 Far-Field Modulation for Super-Resolution Focal Spot 41

3.3 Saturation Microscopy 47

3.4 Breaking the Diffraction Limit Without Diffraction？ 50

3.5 Discussion 53

4.Plasmonic Nanofocusing and Data Storage&Cao Qing 59

4.1 Surface Plasmon and Its Properties 59

4.1.1 Surface Plasmons 59

4.1.2 Enhanced Transmission 61

4.1.3 Metal Wire Surface Plasmon 62

4.1.4 Surface Plasmon Laser 63

4.1.5 Graphene Plasmon 64

4.2 Plasmonic Nanofocusing and Nanoimaging 64

4.2.1 Tapered Structure 64

4.2.2 Multiple Concentric Groove Metallic Lens 67

4.2.3 Metal Films for Super-Diffraction-Limited Imaging 68

4.3 Plasmonic Data Storage at the Nanoscale 70

4.3.1 Brief Introduction of High-Density Optical Data Storage 70

4.3.2 Two Basic Concepts of Plasmonic Data Storage 71

4.3.2.1 High-density data storage technology mixed with plasmonic near-field transducers and bit-patterned magnetic materials 71

4.3.2.2 Five-dimensional optical recording mediated by surface plasmons in gold nanorods 72

4.4 Plasmonic Nanolithography 74

4.4.1 Brief Introduction of Plasmonic Nanolithography 74

4.4.2 Plasmonic Contact Lithography 75

4.4.3 Imaging Lithography of Planar Lens 76

4.4.4 Plasmonic Direct Writing Nanolithography 77

5.Nano-Optical Data Storage with Nonlinear Super-Resolution Thin Films&Wei Jingsong and Gan Fuxi 91

5.1 Introduction 92

5.2 The Principle of Nonlinear Super-Resolution Nano-Optical Data Storage 93

5.3 Optical Response of the Nonlinear Layer 94

5.3.1 Nonlinear Response of Sb-Based Phase Change Thin Films 95

5.3.2 Nonlinear Response of Metal Doped Semiconductor Thin Films 98

5.3.2.1 The sample preparation 98

5.3.2.2 Measurement of the optical nonlinear properties 100

5.3.2.3 The mechanism of nonlinear response 102

5.4 The Formation of Super-Resolution Optical Spot 107

5.4.1 Theoretical Basis of Super-Resolution Spot Formation 107

5.4.2 Super-Resolution Spot Formation by Ag Doped Si Thin Films 109

5.4.3 Super-Resolution Spot Formation by Sb-Based Phase Change Thin Films 112

5.5 Experimental Results of the Nano-Optical Data Recording and Readout 114

5.6 On the Dynamic Readout Characteristic of the Nonlinear Super-Resolution Thin Films 120

5.6.1 Theoretical Analysis of the Dependence of Readout Threshold Power on Mark Size 120

5.6.2 Dependence of Readout Characteristic on Laser Power 122

5.6.3 Dependence of Readout Characteristic on Laser Irradiation Time 123

5.6.4 Analysis of the Influence of Laser Energy on Dynamic Readout Characteristic 126

5.7 Conclusion 128

6.Mastering Technology for High-Density Optical Disc&Geng Yongyou and Wu Yiqun 131

6.1 Introduction 131

6.2 Major Mastering Technologies for High-Density Optical Disc 135

6.2.1 Electron Beam Recording 135

6.2.2 UV and DUV Recording 138

6.2.3 Near-Field Optical Recording 140

6.2.4 Laser Thermal Recording 143

6.2.4.1 Mechanism of laser thermal recording 143

6.2.4.2 Materials for laser thermal recording 144

6.2.4.3 Writing strategy for laser thermal recording 162

6.2.5 STED Recording 163

6.2.5.1 Principle of STED microscopy 163

6.2.5.2 Applications in nanorecording 164

6.3 Conclusion 166

7.Laser-Induced Phase Transition and Its Application in Nano-Optical Storage&Wang Yang and Gan Fuxi 171

7.1 Introduction：Phenomena and Applications of Laser-Induced Phase Transition in the Optical Storage 171

7.1.1 Amorphous and Crystalline States for Binary Memory 173

7.1.2 Transient States for Self-Masking Super-Resolution 174

7.1.3 Meta-Stable Multi-States for Multilevel Recording 176

7.2 Physical Process of Laser-Induced Phase Transition 177

7.3 Probing Method for Laser-Induced Phase Transition Process 182

7.4 Phase Transition Dynamics Driven by Laser Pulses 185

7.4.1 Carrier Dynamics Driven by Ultrashort Laser Pulses 185

7.4.2 Laser Pulse-Induced Amorphization Process 190

7.4.3 Laser Pulse-Induced Crystallization Process 194

7.4.3.1 Comparison of optical and electrical transient response during nanosecond laser pulse-induced crystallization 194

7.4.3.2 Optical transients during the picosecond laser pulse-induced crystallization：comparison of nucleation-driven and growth-driven processes 198

7.4.3.3 Optical transients during the femtosecond laser pulse-induced crystallization 206

7.5 Phase-Change Optical Disk Technology 213

7.6 New Optical Memory Functions Based on Phase-Change Materials 221

7.6.1 Fast Cycling Driven by Ultrashort Laser Pulses with Identical Fluences 221

7.6.2 Optical-Electrical Hybrid Operation for Phase-Change Materials 224

7.6.3 Metal-Nanop article-Embedded Phase-Change Recording Pits for Plasmonics and Super-Resolution 226

7.6.4 Polarization Readout for Multilevel Phase-Change Recording by Crystallization Degree Modulation 232

7.6.5 Polarized Laser-Induced Dichroism of Phase-Change Materials 239

7.6.6 Fluorescence Multi-States of Ion-Doped Phase-Change Thin Films 246

8.SPIN-Based Optical Data Storage&Gu Min，Cao Yaoyu，Li Xiangping，and Gan Zongsong 259

8.1 SPIN Based on Single-Photon Photoinduction 264

8.1.1 Theoretical Model of the SPIN Process 264

8.1.2 Experimental Demonstration of Single-Photon SPIN 267

8.2 SPIN Based on Two-Photon Photoinduction 270

8.2.1 Experimental Demonstration of Two-Photo SPIN 271

8.2.2 Properties and Limitations 276

8.3 Conclusion 278

9.Magnetic Random Access Memory&Han Xiufeng and Syed Shahbaz Ali 281

9.1 History of the Development of MRAM Devices 281

9.2 MRAM Devices Based on GMR/AMR Effects 287

9.3 Field-Write Mode MRAM Based on TMR Effect 290

9.3.1 Astroid-Mode MRAM 292

9.3.2 Principles of Astroid-Mode MRAM 293

9.3.3 Development of Astroid-Mode MRAM 294

9.3.4 Toggle-Mode MRAM 296

9.3.5 Principles of Toggle-Mode MRAM 297

9.3.6 Write-Current Reduction in Toggle-Mode MRAM 298

9.3.7 Energy Diagram of Toggle Operation 301

9.3.8 Competitive Market 306

9.3.9 MRAM Based on Vertical Current Writing and Its Control Method 306

9.3.10 Field-Write Mode MRAM Chip-Design 307

9.4 Spin Transfer Torque MRAM Based on Nanoscale Magnetic Tunnel Junction MTJ 309

9.4.1 Spin Transfer Torque Effects 312

9.4.2 STT Effects in a Multilayer Thin-Film Stack 313

9.4.3 STT MRAM with an in-Plane Magnetic Configuration 315

9.4.4 Switching Characteristics and Threshold in MTJs 316

9.4.5 Switching Probability in the Thermal Regime 317

9.4.6 STT MRAM with a Perpendicular Magnetic Configuration 318

9.4.7 Principles of STT-MRAM with a Perpendicular Magnetic Configuration 319

9.4.8 Reliability of Tunnel Barriers in MTJs 322

9.4.9 Write-Current Reduction 323

9.4.10 Current-Write Mode MRAM Chip-Design 325

9.4.11 Introduction of the STT-MRAM Chip Design 327

9.5 Asymmetric MTJ Switching 329

9.6 Nanoring and Nano-Elliptical Ring-Shaped MTJ-Based MRAM 331

9.7 Thermally Assisted Field Write in MRAM 334

9.7.1 Self-Referenced MRAM 338

9.8 Outlook to the Future MRAM 339

9.8.1 Separated Read and Write Operation MRAM 340

9.8.2 Domain Wall Motion MRAM 340

9.8.3 Rashba Effect/Spin-Orbital Coupling Effect Based MRAM 342

9.8.4 Spin Hall Effect-Based MRAM 344

9.8.5 Electric Field Switching MRAM 346

9.8.6 Roadmap of MRAM Demo Device Development 348

10.RRAM Device and Circuit&Lin Yinyin，Song Yali，and Xue Xiaoyong 363

10.1 Introduction 363

10.2 RRAM Cell 368

10.2.1 1T1R Cell with Transistor as Selector Device 368

10.2.1.1 1T1R cell structure 368

10.2.1.2 Bipolar and unipolar operation 372

10.2.2 Cell Using Diode as Selector Device 374

10.2.2.1 1D1R cell with traditional one-directional diode as selector device for unipolar operation 374

10.2.2.2 1BD1R cell with bidirectional diode as selector device in support of both bipolar and unipolar operation 376

10.2.3 Self-Selecting RRAM Cell 379

10.2.3.1 Hybrid memory 379

10.2.3.2 Complementary-RRAM 382

10.3 Resistive Switching Mechanism 383

10.3.1 ITRS Categories of RRAM 383

10.3.2 Resistive Switching Behavior 387

10.3.3 Forming and SET Process 388

10.3.4 Filament Type 389

10.3.5 Filament Size and the Scaling Characteristics 391

10.4 Influencing Factors and Optimization of RRAM Performance 393

10.4.1 Decrease of Switching Current 393

10.4.1.1 Multilayer architecture 395

10.4.1.2 Control of the compliance current 397

10.4.2 Enhancement of Uniformity 398

10.4.2.1 Electrode effects 399

10.4.2.2 Buffer layer inserting and bilayer construct 400

10.4.2.3 Embedded metal to control conductive path 401

10.4.2.3 Programming algorithm 402

10.5 RRAM Reliability 403

10.5.1 The Retention Test Method 403

10.5.2 Retention Model and Improvement Methods 404

10.5.2.1 RRAM retention failure model 404

10.5.2.2 Retention improvement by forming high-density Vo 405

10.5.2.3 Retention improvement by dynamic self-adaptive write method 406

10.5.3 Endurance Model and Improvement Methods 408

10.5.3.1 Endurance failure model 408

10.5.3.2 High-endurance cell architecture 411

10.5.3.3 Enhancement of endurance by programming algorithm 414

10.6 Circuit Techniques for Fast Read and Write 415

10.6.1 Current SA for High-Speed Read 415

10.6.1.1 Feedback-regulated bit line biasing approach 416

10.6.1.2 Process-temperature-aware dynamic BL-bias scheme 417

10.6.2 Fast Verify for High-Speed Write 418

10.7 Yield and Reliability Enhancement Assisted by Circuit 420

10.7.1 Circuit Techniques to Improve Read Yield 420

10.7.1.1 Parallel-series reference cell 421

10.7.1.2 SARM reference 421

10.7.1.3 Body-drain-driven current sense amplifier 422

10.7.1.4 Temperature-aware bit line biasing 423

10.7.2 Circuit-Assisted Write Yield Improvement and Operation Power Reduction 425

10.7.2.1 Self-adaptive write mode 426

10.7.2.2 Self-timing write with feedback 427

10.7.3 Circuit-Assisted Endurance and Retention Improvement 428

10.7.3.1 Filament scaling forming technique and level-verify-write scheme 428

10.7.3.2 Dynamic self-adaptive write method 431

10.8 Circuit Strategies for 3D RRAM 432

10.8.1 Sneaking Path and Large Power Consumption of Conventional Cross-Bar Architecture 434

10.8.2 3D RRAM Based on 1TXR Cell without Access Transistor 435

10.8.2.1 1TXR cell 436

10.8.2.2 Array architecture 437

10.8.2.3 Write algorithm to inhibit write disturbance 438

10.8.2.4 Read algorithm to inhibit read disturbance 441

10.8.3 3D RRAM Based on 1D1R Cell 442

10.8.3.1 Array architecture 442

10.8.3.2 Write circuit with leakage compensation for accurate state-change detection 443

10.8.3.3 Read circuit with bit line capacitive isolation for fast swing in SA 444

10.8.4 3D RRAM Based on 1BD1R 445

10.8.4.1 Array architecture 445

10.8.4.2 Programming conditions for 1BD array 446

10.8.4.3 Multi-bit write architecture with write dummy cell 447

10.8.5 Vertical Stack with Cost Advantage of Lithography 448

10.8.5.1 Cross section of cell and array 448

10.8.5.2 Integration 450

10.8.5.3 Cost advantage of lithography 451

11.Phase-Change Random Access Memory&Liu Bo 463

11.1 Introduction 464

11.2 Principle of PCRAM 465

11.3 Comparisons between PCRAM and SRAM，DRAM and Flash 467

11.4 History of PCRAM R＆D 470

11.5 Phase-Change Material 474

11.5.1 Materials Selective Method 474

11.5.2 GeSbTe System 476

11.5.3 SbTe-Based Materials 483

11.5.4 SiSbTe System 487

11.5.5 GeTe System 496

11.5.6 Sb-Based Materials 498

11.5.7 Nano-Composite Phase-Change Materials 501

11.5.8 Superlattice-Like Structure Phase-Change Materials 503

11.6 Memory Cell Selector 506

11.6.1 Overview 506

11.6.2 Diode 510

11.7 Memory Cell Resistor Structure 514

11.8 Processing 517

11.8.1 Deposition of Phase-Change Materials 517

11.8.2 Etching of Phase-Change Materials 519

11.8.3 Chemical Mechanical Polishing of Phase-Change Materials 523

11.9 Characteristics of PCRAM Memory Cell 528

11.9.1 Reduction of Operation Current/Voltage 528

11.9.2 Reliability 539

11.9.3 Data Retention 543

11.9.4 Speed 544

11.10 Future Outlook 546

11.10.1 Scaling Properties 547

11.10.2 Multi-Bit Operation 549

11.10.3 Three-Dimensional Integration 552

11.11 Potential Application of PCRAM 553

12.Nano-DRAM Technology for Data Storage Application&Wang Pengfei and Zhang David Wei 591

12.1 Introduction to DRAM Cell Technology 592

12.1.1 Cell Operation of DRAM Cell 592

12.1.2 DRAM Device and Array Structure 594

12.1.3 Requirements of Nano-Scale DRAM Cell 595

12.1.3.1 Capacitance of the storage node 595

12.1.3.2 Drive current and off leakage current of array access transistor 596

12.2 Nano-DRAM Memory Cell and Array Design 596

12.2.1 Layout of the Stacked-Capacitor DRAM 597

12.2.2 Design of the Array Transistor 598

12.2.2.1 RCAT and saddle-fin transistor 598

12.2.2.2 Extended U-shaped device 599

12.2.2.3 FinFET for DRAM 601

12.2.2.4 Spherical transistor and buried word line array device 602

12.2.3 Cell Architecture 603

12.2.3.1 Connection between the storage capacitor and array transistor 603

12.2.3.2 6F2 cell design 604

12.2.4 Storage Capacitor 606

12.3 Novel DRAM Concepts 606

12.3.1 Floating Body Memory Cell 608

12.3.2 Tunneling Transistor-Based Memory Cell 610

12.3.2.1 Device working principle 611

12.3.2.2 Device operation 613

12.3.2.3 Modeling of the memory access transistor of SFG DRAM：TFET 615

12.3.2.4 Capacitive coupling in the SFG DRAM cell 617

12.3.2.5 Transient behavior 618

12.3.2.6 Investigation of the integration methods 622

12.3.2.7 Self-refreshable “1” and nondestructive read properties 623

12.3.2.8 Scalability and U-shaped SFG memory 624

12.3.2.9 Extended applications of SFG：1-T Image sensor 626

12.3.2.10 Integration with logic and flash memory devices 628

12.4 Conclusions 629

13.Ferroelectric Memory&Wang Genshui，Gao Feng and Dong Xianlin 633

13.1 Introduction 633

13.2 Ferroelectricity 635

13.2.1 Historical Overview 635

13.2.2 Characteristics 637

13.2.2.1 Polarization and hysteresis 639

13.2.2.2 Domains and switching 640

13.2.2.3 Materials 642

13.2.2.4 Perovskite oxides 643

13.2.2.5 Size effects 645

13.2.2.6 Strain 646

13.2.3 Applications 647

13.3 Ferroelectric Memory 647

13.3.1 FeRAM 648

13.3.1.1 FeCapacitor 648

13.3.1.2 Depolarizing fields and critical thickness 648

13.3.1.3 FeRAM 650

13.3.2 FeFETRAM 651

13.3.3 Reliabilities 653

13.3.3.1 Retention 653

13.3.3.2 Endurance 654

13.3.3.3 Temperature-dependent dielectric anomaly 658

13.3.4 Key Technologies 663

13.3.5 Competing Memory Technologies 664

13.4 Future Prospects 665

13.4.1 Multiferroics Memory 665

13.4.2 Nanoscale Ferroelectric Memory 666

13.4.3 Organic Ferroelectric Memory 667

13.5 Conclusions 668

14.Nanomagnetic and Hybrid Information Storage&Jin Qingyuan and Ma Bin 675

14.1 Overview of Magnetic Recording and Hard Disk Drive 675

14.2 Hard Drive Technology 679

14.2.1 Inductive Magnetic Head 680

14.2.2 Magnetoresistive Head 680

14.2.3 Giant Magnetoresistive Head 682

14.3 Hard Drive Technology 687

14.3.1 Superparamagnetic Effect and Bottleneck of Longitudinal Recording Media 687

14.3.2 Perpendicular Recording Media 688

14.3.3 L10-Ordered FePt 690

14.3.4 Exchange-Coupled Composite Media 693

14.4 Emerging Magnetic Data Storage Technology 695

14.4.1 Perpendicular Magnetic Recording 695

14.4.2 Heat-Assisted Magnetic Recording 696

14.4.3 Patterned Media 699

Index 707