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半导体物理性能手册  第2卷  上  英文
半导体物理性能手册  第2卷  上  英文

半导体物理性能手册 第2卷 上 英文PDF电子书下载

数理化

  • 电子书积分:10 积分如何计算积分?
  • 作 者:(日)足立贞夫主编
  • 出 版 社:哈尔滨:哈尔滨工业大学出版社
  • 出版年份:2014
  • ISBN:9787560345161
  • 页数:232 页
图书介绍:本册由9章组成,介绍介绍Ⅲ-Ⅴ族 半导体化合物,10.纤锌矿型氮化镓,11.立方氮化镓,12.磷化镓(差距),13.砷化镓(砷化镓),14.锑化镓(GaSb),15.氮化铟(酒店),16.磷化铟(InP),17.砷化铟(成),18.锑化铟(InSb),共9种化合物的结构属性、热性能、弹性、声子和晶格振动性质、集成效应和相关属性、能带结构:能带、能带结构:电子和孔有效质量、电子形变势、电子亲和力和肖特基势垒高度、光学特性、,电光和非线性光学特性、载体运输属性等。
《半导体物理性能手册 第2卷 上 英文》目录

Acknowledgments 1

Contents of Other Volumes 1

1 Cubic Boron Nitride (c-BN) 1

1.1 Structural Properties 1

1.1.1 Ionicity 1

1.1.2 Elemental Isotopic Abundance and Molecular Weight 1

1.1.3 Crystal Structure and Space Group 2

1.1.4 Lattice Constant and Its Related Parameters 2

1.1.5 Structural Phase Transition 3

1.1.6 Cleavage Plane 3

1.2 Thermal Properties 4

1.2.1 Melting Point and Its Related Parameters 4

1.2.2 Specific Heat 4

1.2.3 Debye Temperature 5

1.2.4 ThermaI Expansion Coefficient 6

1.2.5 Thermal Conductivity and Diffusivity 6

1.3 Elastic Properties 7

1.3.1 Elastic Constant 7

1.3.2 Third-Order Elastic Constant 8

1.3.3 Young's Modulus,Poisson's Ratio,and Similar 8

1.3.4 Microhardness 9

1.3.5 Sound Velocity 9

1.4 Phonons and Lattice Vibronic Properties 10

1.4.1 Phonon Dispersion Relation 10

1.4.2 Phonon Frequency 10

1.4.3 Mode Grüneisen Parameter 12

1.4.4 Phonon Deformation Potential 12

1.5 Collective Effects and Related Properties 12

1.5.1 Piezoelectric Constant 12

1.5.2 Fr?hlich Coupling Constant 12

1.6 Energy-Band Structure:Energy-Band Gaps 13

1.6.1 Basic Properties 13

1.6.2 E0-Gap Region 14

1.6.3 Higher-Lying Direct Gap 15

1.6.4 Lowest Indirect Gap 16

1.6.5 Conduction-Valley Energy Separation 17

1.6.6 Direct-Indirect-Gap Transition Pressure 17

1.7 Energy-Band Structure:Electron and Hole Effective Masses 17

1.7.1 Electron Effective Mass:Γ Valley 17

1.7.2 Electron Effective Mass:Satellite Valley 17

1.7.3 Hole Effective Mass 18

1.8 Electronic Deformation Potential 19

1.8.1 Intravalley Deformation Potential:Γ Point 19

1.8.2 Intravalley Deformation Potential:High-Symmetry Points 20

1.8.3 Intervalley Deformation Potential 20

1.9 Electron Affinity and Schottky Barrier Height 20

1.9.1 Electron Affinity 20

1.9.2 Schottky Barrier Height 21

1.10 Optical Properties 21

1.10.1 Summary of Optical Dispersion Relations 21

1.10.2 The Reststrahlen Region 22

1.10.3 At or Near the Fundamental Absorption Edge 23

1.10.4 The Interband Transition Region 25

1.10.5 Free-Carrier Absorption and Related Phenomena 25

1.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 26

1.11.1 Elastooptic Effect 26

1.11.2 Linear Electrooptic Constant 26

1.11.3 Quadratic Electrooptic Constant 26

1.11.4 Franz-Keldysh Effect 26

1.11.5 Nonlinear Optical Constant 26

1.12 Carrier Transport Properties 27

1.12.1 Low-Field Mobility:Electrons 27

1.12.2 Low-Field Mobility:Holes 27

1.12.3 High-Field Transport:Electrons 27

1.12.4 High-Field Transport:Holes 27

1.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 27

1.12.6 Minority-Carrier Transport:Holes in n-Type Materials 27

1.12.7 Impact Ionization Coefficient 27

2 Hexagonal Boron Nitride(h-BN) 29

2.1 Structural Properties 29

2.1.1 Ionicity 29

2.1.2 Elemental Isotopic Abundance and Molecular Weight 29

2.1.3 Crystal Structure and Space Group 30

2.1.4 Lattice Constant and Its Related Parameters 30

2.1.5 Structural Phase Transition 31

2.1.6 Cleavage Plane 31

2.2 Thermal Properties 31

2.2.1 Melting Point and Its Related Parameters 31

2.2.2 Specific Heat 31

2.2.3 Debye Temperature 32

2.2.4 Thermal Expansion Coefficient 33

2.2.5 Thermal Conductivity and Diffusivity 34

2.3 Elastic Properties 34

2.3.1 Elastic Constant 34

2.3.2 Third-Order Elastic Constant 35

2.3.3 Young's Modulus,Poisson's Ratio,and Similar 35

2.3.4 Microhardness 36

2.3.5 Sound Velocity 36

2.4 Phonons and Lattice Vibronic Properties 36

2.4.1 Phonon Dispersion Relation 36

2.4.2 Phonon Frequency 37

2.4.3 Mode Grüneisen Parameter 37

2.4.4 Phonon Deformation Potential 38

2.5 Collective Effects and Related Properties 38

2.5.1 Piezoelectric Constant 38

2.5.2 Fr?hlich Coupling Constant 38

2.6 Energy-Band Structure:Energy-Band Gaps 38

2.6.1 Basic Properties 38

2.6.2 E0-Gap Region 40

2.6.3 Higher-Lying Direct Gap 40

2.6.4 Lowest Indirect Gap 41

2.6.5 Conduction-Valley Energy Separation 41

2.6.6 Direct-Indirect-Gap Transition Pressure 42

2.7 Energy-Band Structure:Electron and Hole Effective Masses 42

2.7.1 Electron Effective Mass:Γ Valley 42

2.7.2 Electron Effective Mass:Satellite Valley 42

2.7.3 Hole Effective Mass 42

2.8 Electronic Deformation Potential 42

2.8.1 Intravalley Deformation Potential:Γ Point 42

2.8.2 Intravalley Deformation Potential:High-Symmetry Points 42

2.8.3 Intervalley Deformation Potential 43

2 9 Electron Affinity and Schottky Barrier Height 43

2.9.1 Electron Affinity 43

2.9.2 Schottky Barrier Height 43

2.10 Optical Properties 43

2.10.1 Summary of Optical Dispersion Relations 43

2.10.2 The Reststrahlen Region 44

2.10.3 At or Near the Fundamental Absorption Edge 45

2.10.4 The Interband Transition Region 46

2.10.5 Free-Carrier Absorption and Related Phenomena 47

2.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 47

2.11.1 Elastooptic Effect 47

2.11.2 Linear Electrooptic Constant 47

2.11.3 Quadratic Electrooptic Constant 48

2.11.4 Franz-Keldysh Effect 48

2.11.5 Nonlinear Optical Constant 48

2.12 Carrier Transport Properties 48

2.12.1 Low-Field Mobility:Electrons 48

2.12.2 Low-Field Mobility:Holes 48

2.12.3 High-Field Transport:Electrons 48

2.12.4 High-Field Transport:Holes 48

2.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 48

2.12.6 Minority-Carrier Transport:Holes in n-Type Materials 48

2.12.7 Impact Ionization Coefficient 48

3 Boron Phosphide(BP) 49

3.1 Structural Properties 49

3.1.1 Ionicity 49

3.1.2 Elemental Isotopic Abundance and Molecular Weight 49

3.1.3 Crystal Structure and Space Group 50

3.1.4 Lattice Constant and Its Related Parameters 50

3.1.5 Structural Phase Transition 50

3.1.6 Cleavage Plane 51

3.2 Thermal Properties 51

3.2.1 Melting Point and Its Related Parameters 51

3.2.2 Specific Heat 51

3.2.3 Debye Temperature 52

3.2.4 Thermal Expansion Coefficient 52

3.2.5 Thermal Conductivity and Diffusivity 53

3.3 Elastic Properties 54

3.3.1 Elastic Constant 54

3.3.2 Third-Order Elastic Constant 54

3.3.3 Young's Modulus,Poisson's Ratio,and Similar 54

3.3.4 Microhardness 55

3.3.5 Sound Velocity 55

3.4 Phonons and Lattice Vibronic Properties 56

3.4.1 Phonon Dispersion Relation 56

3.4.2 Phonon Frequency 56

3.4.3 Mode Grüneisen Parameter 57

3.4.4 Phonon Deformation Potential 57

3.5 Collective Effects and Related Properties 57

3.5.1 Piezoelectric Constant 57

3.5.2 Fr?hlich Coupling Constant 57

3.6 Energy-Band Structure:Energy-Band Gaps 57

3.6.1 Basic Properties 57

3.6.2 E0-Gap Region 58

3.6.3 Higher-Lying Direct Gap 59

3.6.4 Lowest Indirect Gap 59

3.6.5 Conduction-Valley Energy Separation 59

3.6.6 Direct-Indirect-Gap Transition Pressure 59

3.7 Energy-Band Structure:Electron and Hole Effective Masses 60

3.7.1 Electron Effective Mass:Γ Valley 60

3.7.2 Electron Effective Mass:Satellite Valley 60

3.7.3 Hole Effective Mass 60

3.8 Electronic Deformation Potential 61

3.8.1 Intravalley Deformation Potential:Γ Point 61

3.8.2 Intravalley Deformation Potential:High-Symmetry Points 61

3.8.3 Intervalley Deformation Potential 61

3.9 Electron Affinity and Schottky Barrier Height 62

3.9.1 Electron Affinity 62

3.9.2 Schottky Barrier Height 62

3.10 Optical Properties 62

3.10.1 Summary of Optical Dispersion Relations 62

3.10.2 The Reststrahlen Region 62

3.10.3 At or Near the Fundamental Absorption Edge 62

3.10.4 The Interband Transition Region 63

3.10.5 Free-Carrier Absorption and Related Phenomena 63

3.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 64

3.11.1 Elastooptic Effect 64

3.11.2 Linear Electrooptic Constant 64

3.11.3 Quadratic Electrooptic Constant 64

3.11.4 Franz-Keldysh Effect 64

3.11.5 Nonlinear Optical Constant 64

3.12 Carrier Transport Properties 64

3.12.1 Low-Field Mobility:Electrons 64

3.12.2 Low-Field Mobility:Holes 66

3.12.3 High-Field Transport:Electrons 66

3.12.4 High-Field Transport:Holes 66

3.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 66

3.12.6 Minority-Carrier Transport:Holes in n-Type Materials 67

3.12.7 Impact Ionization Coefficient 67

4 Boron Arsenide(BAs) 69

4.1 Structural Properties 69

4.1.1 Ionicity 69

4.1.2 Elemental Isotopic Abundance and Molecular Weight 69

4.1.3 Crystal Structure and Space Group 70

4.1.4 Lattice Constant and Its Related Parameters 70

4.1.5 Structural Phase Transition 70

4.1.6 Cleavage Plane 71

4.2 Thermal Properties 71

4.2.1 Melting Point and Its Related Parameters 71

4.2.2 Specific Heat 71

4.2.3 Debye Temperature 72

4.2.4 Thermal Expansion Coefficient 72

4.2.5 Thermal Conductivity and Diffusivity 72

4.3 Elastic Properties 73

4.3.1 Elastic Constant 73

4.3.2 Third-Order Elastic Constant 73

4.3.3 Young's Modulus,Poisson's Ratio,and Similar 73

4.3.4 Microhardness 74

4.3.5 Sound Velocity 75

4.4 Phonons and Lattice Vibronic Properties 75

4.4.1 Phonon Dispersion Relation 75

4.4.2 Phonon Frequency 75

4.4.3 Mode Grüneisen Parameter 75

4.4.4 Phonon Deformation Potential 75

4.5 Collective Effects and Related Properties 75

4.5.1 Piezoelectric Constant 75

4.5.2 Fr?hlich Coupling Constant 75

4.6 Energy-Band Structure:Energy-Band Gaps 76

4.6.1 Basic Properties 76

4.6.2 E0-Gap Region 78

4.6.3 Higher-Lying Direct Gap 78

4.6.4 Lowest Indirect Gap 78

4.6.5 Conduction-Valley Energy Separation 78

4.6.6 Direct-Indirect-Gap Transition Pressure 78

4.7 Energy-Band Structure:Electron and Hole Effective Masses 78

4.7.1 Electron Effective Mass:Γ Valley 78

4.7.2 Electron Effective Mass:Satellite Valley 79

4.7.3 Hole Effective Mass 79

4.8 Electronic Deformation Potential 79

4.8.1 Intravalley Deformation Potential:Γ Point 79

4.8.2 Intravalley Deformation Potential:High-Symmetry Points 79

4.8.3 Intervalley Deformation Potential 80

4.9 Electron Affinity and Schottky Barrier Height 80

4.9.1 Electron Affinity 80

4.9.2 Schottky Barrier Height 80

4.10 Optical Properties 80

4.10.1 Summary of Optical Dispersion Relations 80

4.10.2 The Reststrahlen Region 80

4.10.3 At or Near the Fundamental Absorption Edge 80

4.10.4 The Interband Transition Region 81

4.10.5 Free-Carrier Absorption and Related Phenomena 81

4.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 81

4.11.1 Elastooptic Effect 81

4.11.2 Linear Electrooptic Constant 81

4.11.3 Quadratic Electrooptic Constant 81

4.11.4 Franz-Keldysh Effect 81

4.11.5 Nonlinear Optical Constant 81

4.12 Carrier Transport Properties 82

4.12.1 Low-Field Mobility:Electrons 82

4.12.2 Low-Field Mobility:Holes 82

4.12.3 High-Field Transport:Electrons 82

4.12.4 High-Field Transport:Holes 82

4.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 82

4.12.6 Minority-Carrier Transport:Holes in n-Type Materials 82

4.12.7 Impact Ionization Coefficient 82

5 Wurtzite Aluminum Nitride (w-AlN) 83

5.1 Structural Properties 83

5.1.1 Ionicity 83

5.1.2 Elemental Isotopic Abundance and Molecular Weight 83

5.1.3 Crystal Structure and Space Group 84

5.1.4 Lattice Constant and Its Related Parameters 84

5.1.5 Structural Phase Transition 85

5.1.6 Cleavage Plane 85

5.2 Thermal Properties 85

5.2.1 Melting Point and Its Related Parameters 85

5.2.2 Specific Heat 86

5.2.3 Debye Temperature 87

5.2.4 Thermal Expansion Coefficient 88

5.2.5 Thermal Conductivity and Diffusivity 88

5.3 Elastic Properties 89

5.3.1 Elastic Constant 89

5.3.2 Third-Order Elastic Constant 90

5.3.3 Young's Modulus,Poisson's Ratio,and Similar 90

5.3.4 Microhardness 91

5.3.5 Sound Velocity 91

5.4 Phonons and Lattice Vibronic Properties 92

5.4.1 Phonon Dispersion Relation 92

5.4.2 Phonon Frequency 92

5.4.3 Mode Grüineisen Parameter 95

5.4.4 Phonon Deformation Potential 95

5.5 Collective Effects and Related Properties 96

5.5.1 Piezoelectric Constant 96

5.5.2 Fr?hlich Coupling Constant 96

5.6 Energy-Band Structure:Energy-Band Gaps 97

5.6.1 Basic Properties 97

5.6.2 E0-Gap Region 99

5.6.3 Higher-Lying Direct Gap 102

5.6.4 Lowest lndirect Gap 102

5.6.5 Conduction-Valley Energy Separation 103

5.6.6 Direct-Indirect-Gap Transition Pressure 103

5.7 Energy-Band Structure:Electron and Hole Effective Masses 104

5.7.1 Electron Effective Mass:Γ Valley 104

5.7.2 Electron Effective Mass:Satellite Valley 104

5.7.3 Hole Effective Mass 105

5.8 Electronic Deformation Potential 106

5.8.1 Intravalley Deformation Potential:Γ Point 106

5.8.2 Intravalley Deformation Potential:High-Symmetry Points 106

5.8.3 Intervalley Deformation Potential 107

5.9 Electron Affinity and Schottky Barrier Height 107

5.9.1 Electron Affinity 107

5.9.2 Schottky Barrier Height 108

5.10 Optical Properties 108

5.10.1 Summary of Optical Dispersion Relations 108

5.10.2 The Reststrahlen Region 115

5.10.3 At or Near the Fundamental Absorption Edge 117

5.10.4 The Interband Transition Region 118

5.10.5 Free-Carrier Absorption and Related Phenomena 119

5.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 119

5.11.1 Elastooptic Effect 119

5.11.2 Linear Electrooptic Constant 119

5.11.3 Quadratic Electrooptic Constant 119

5.11.4 Franz-Keldysh Effect 119

5.11.5 Nonlinear Optical Constant 120

5.12 Carrier Transport Properties 121

5.12.1 Low-Field Mobility:Electrons 121

5.12.2 Low-Field Mobility:Holes 122

5.12.3 High-Field Transport:Electrons 122

5.12.4 High-Field Transport:Holes 122

5.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 122

5.12.6 Minority-Carrier Transport:Holes in n-Type Materials 122

5.12.7 Impact Ionization Coefficient 122

6 Cubic Aluminum Nitride(c-AlN) 123

6.1 Structural Properties 123

6.1.1 Ionicity 123

6.1.2 Elemental Isotopic Abundance and Molecular Weight 123

6.1.3 Crystal Structure and Space Group 124

6.1.4 Lattice Constant and Its Related Parameters 124

6.1.5 Structural Phase Transition 124

6.1.6 Cleavage Plane 124

6.2 Thermal Properties 125

6.2.1 Melting Point and Its Related Parameters 125

6.2.2 Specific Heat 125

6.2.3 Debye Temperature 125

6.2.4 Thermal Expansion Coefficient 125

6.2.5 Thermal Conductivity and Diffusivity 125

6.3 Elastic Properties 125

6.3.1 Elastic Constant 125

6.3.2 Third-Order Elastic Constant 126

6.3.3 Young's Modulus,Poisson's Ratio,and Similar 126

6.3.4 Microhardness 127

6.3.5 Sound Velocity 127

6 4 Phonons and Lattice Vibronic Properties 128

6.4.1 Phonon Dispersion Relation 128

6.4.2 Phonon Frequency 128

6.4.3 Mode Grüneisen Parameter 128

6.4.4 Phonon Deformation Potential 129

6.5 Collective Effects and Related Properties 129

6.5.1 Piezoelectric Constant 129

6.5.2 Fr?hlich Coupling Constant 129

6.6 Energy-Band Structure:Energy-Band Gaps 129

6.6.1 Basic Properties 129

6.6.2 E0-Gap Region 131

6.6.3 Higher-Lying Direct Gap 132

6.6.4 Lowest Indirect Gap 133

6.6.5 Conduction-Valley Energy Separation b 134

6.6.6 Direct-Indirect-Gap Transition Pressure 134

6.7 Energy-Band Structure:Electron and Hole Effective Masses 134

6.7.1 Electron Effective Mass:Γ Valley 134

6.7.2 Electron Effective Mass:Satellite Valley 135

6.7.3 Hole Effective Mass 135

6.8 Electronic Defcrmation Potential 136

6.8.1 Intravalley Deformation Potential:Γ Point 136

6.8.2 Intravalley Deformation Potential:High-Symmetry Points 137

6.8.3 Intervalley Deformation Potential 138

6.9 Electron Affinity and Schottky Barrier Height 138

6.9.1 Electron Affinity 138

6.9.2 Schottky Barrier Height 138

6.10 Optical Properties 139

6.10.1 Summary of Optical Dispersion Relations 139

6.10.2 The Reststrahlen Region 141

6.10.3 At or Near the Fundamental Absorption Edge 141

6.10.4 The Interband Transition Region 141

6.10.5 Free-Carrier Absorption and Related Phenomena 141

6.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 142

6.11.1 Elastooptic Effect 142

6.11.2 Linear Electrooptic Constant 142

6.11.3 Quadratic Electrooptic Constant 142

6.11.4 Franz-Keldysh Effect 142

6.11.5 Nonlinear Optical Constant 142

6.12 Carrier Transport Properties 143

6.12.1 Low-Field Mobility:Electrons 143

6.12.2 Low-Field Mobility:Holes 143

6.12.3 High-Field Transport:Electrons 143

6.12.4 High-Field Transport:Holes 143

6.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 143

6.12.6 Minority-Carrier Transport:Holes in n-Type Materials 143

6.12.7 Impact Ionization Coefficient 143

7 Aluminum Phosphide(AlP) 145

7.1 Structural Properties 145

7.1.1 Ionicity 145

7.1.2 Elemental Isotopic Abundance and Molecular Weight 145

7.1.3 Crystal Structure and Space Group 146

7.1.4 Lattice Constant and Its Related Parameters 146

7.1.5 Structural Phase Transition 147

7.1.6 Cleavage Plane 147

7.2 Thermal Properties 148

7.2.1 Melting Point and Its Related Parameters 148

7.2.2 Specific Heat 148

7.2.3 Debye Temperature 148

7.2.4 Thermal Expansion Coefficient 149

7.2.5 Thermal Conductivity and Diffusivity 150

7.3 Elastic Properties 150

7.3.1 Elastic Constant 150

7.3.2 Third-Order Elastic Constant 151

7.3.3 Young's Modulus,Poisson's Ratio,and Similar 151

7.3.4 Microhardness 152

7.3.5 Sound Velocity 152

7.4 Phonons and Lattice Vibronic Properties 152

7.4.1 Phonon Dispersion Relation 152

7.4.2 Phonon Frequency 152

7.4.3 Mode Grüneisen Parameter 153

7.4.4 Phonon Deformation Potential 153

7.5 Collective Effects and Related Properties 153

7.5.1 Piezoelectric Constant 153

7.5.2 Fr?hlich Coupling Constant 153

7.6 Energy-Band Structure:Energy-Band Gaps 154

7.6.1 Basic Properties 154

7.6.2 E0-Gap Region 155

7.6.3 Higher-Lying Direct Gap 156

7.6.4 Lowest Indirect Gap 156

7.6.5 Conduction-Valley Energy Separation 157

7.6.6 Direct-Indirect-Gap Transition Pressure 157

7.7 Energy-Band Structure:Electron and Hole Effective Masses 157

7.7.1 Electron Effective Mass:Γ Valley 157

7.7.2 Electron Effective Mass:Satellite Valley 158

7.7.3 Hole Effective Mass 158

7.8 Electronic Deformation Potential 159

7.8.1 Intravalley Deformation Potential:Γ Point 159

7.8.2 Intravalley Deformation Potential:High-Symmetry Points 160

7.8.3 Intervalley Deformation Potential 161

7.9 Electron Affinity and Schottky Barrier Height 161

7.9.1 Electron Affinity 161

7.9.2 Schottky Barrier Height 161

7.10 Optical Properties 162

7.10.1 Summary of Optical Dispersion Relations 162

7.10.2 The Reststrahlen Region 163

7.10.3 At or Near the Fundamental Absorption Edge 163

7.10.4 The Interband Transition Region 164

7.10.5 Free-Carrier Absorption and Related Phenomena 164

7.1l Elastooptic,Electrooptic,and Nonlinear Optical Properties 164

7.11.1 Elastooptic Effect 164

7.11.2 Linear Electrooptic Constant 164

7.11.3 Quadratic Electrooptic Constant 164

7.11.4 Franz-Keldysh Effect 164

7.11.5 Nonlinear Optical Constant 164

7.12 Carrier Transport Properties 165

7.12.1 Low-Field Mobility:Electrons 165

7.12.2 Low-Field Mobility:Holes 165

7.12.3 High-Field Transport:Electrons 166

7.12.4 High-Field Transport:Holes 166

7.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 166

7.12.6 Minority-Carrier Transport:Holes in n-Type Materials 166

7.12.7 Impact Ionization Coefficient 166

8 Aluminum Arsenide(AlAs) 167

8.1 Structural Properties 167

8.1.1 Ionicity 167

8.1.2 Elemental Isotopic Abundance and Molecular Weight 167

8.1.3 Crystal Structure and Space Group 168

8.1.4 Lattice Constant and Its Related Parameters 168

8.1.5 Structural Phase Transition 169

8.1.6 Cleavage Plane 169

8.2 Thermal Properties 170

8.2.1 Melting Point and Its Related Parameters 170

8.2.2 Specific Heat 170

8.2.3 Debye Temperature 171

8.2.4 Thermal Expansion Coefficient 172

8.2.5 Thermal Conductivity and Diffusivity 173

8.3 Elastic Properties 173

8.3.1 Elastic Constant 173

8.3.2 Third-Order Elastic Constant 173

8.3.3 Young's Modulus,Poisson's Ratio,and Similar 173

8.3.4 Microhardness 175

8.3.5 Sound Velocity 175

8.4 Phonons and Lattice Vibronic Properties 175

8.4.1 Phonon Dispersion Relation 175

8.4.2 Phonon Frequency 176

8.4.3 Mode Grüneisen Parameter 178

8.4.4 Phonon Deformation Potential 178

8.5 Collective Effects and Related Properties 178

8.5.1 Piezoelectric Constant 178

8.5.2 Fr?hlich Coupling Constant 179

8.6 Energy-Band Structure:Energy-Band Gaps 179

8.6.1 Basic Properties 179

8.6.2 E0-Gap Region 180

8.6.3 Higher-Lying Direct Gap 181

8.6.4 Lowest Indirect Gap 182

8.6.5 Conduction-Valley Energy Separation 184

8.6.6 Direct-Indirect-Gap Transition Pressure 184

8.7 Energy-Band Structure:Electron and Hole Effective Masses 184

8.7.1 Electron Effective Mass:Γ Valley 184

8.7.2 Electron Effective Mass:Satellite Valley 185

8.7.3 Hole Effective Mass 186

8.8 Electronic Deformation Potential 187

8.8.1 Intravalley Deformation Potential:Γ Point 187

8.8.2 Intravalley Deformation Potential:High-Symmetry Points 188

8.8.3 Intervalley Deformation Potential 189

8.9 Electron Affinity and Schottky Barrier Height 189

8.9.1 Electron Affinity 189

8.9.2 Schottky Barrier Height 189

8.10 Optical Properties 190

8.10.1 Summary of Optical Dispersion Relations 190

8.10.2 The Reststrahlen Region 191

8.10.3 At or Near the Fundamental Absorption Edge 192

8.10.4 The Interband Transition Region 193

8.10.5 Free-Carrier Absorption and Related Phenomena 194

8.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 194

8.11.1 Elastooptic Effect 194

8.11.2 Linear Electrooptic Constant 195

8.11.3 Quadratic Electrooptic Constant 195

8.11.4 Franz-Keldysh Effect 195

8.11.5 Nonlinear Optical Constant 195

8.12 Carrier Transport Properties 195

8.12.1 Low-Field Mobility:Electrons 195

8.12.2 Low-Field Mobility:Holes 196

8.12.3 High-Field Transport:Electrons 197

8.12.4 High-Field Transport:Holes 197

8.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 197

8.12.6 Minority-Carrier Transport:Holes in n-Type Materials 198

8.12.7 Impact Ionization Coefficient 198

9 Aluminum Antimonide(AlSb) 199

9.1 Structural Properties 199

9.1.1 Ionicity 199

9.1.2 Elemental Isotopic Abundance and Molecular Weight 199

9.1.3 Crystal Structure and Space Group 200

9.1.4 Lattice Constant and Its Related Parameters 200

9.1.5 Structural Phase Transition 201

9.1.6 Cleavage Plane 201

9.2 Thermal Properties 202

9.2.1 Melting Point and Its Related Parameters 202

9.2.2 Specific Heat 203

9.2.3 Debye Temperature 204

9.2.4 Thermal Expansion Coefficient 204

9.2.5 Thermal Conductivity and Diffusivity 205

9.3 Elastic Properties 206

9.3.1 Elastic Constant 206

9.3.2 Third-Order Elastic Constant 206

9.3.3 Young's Modulus,Poisson's Ratio,and Similar 207

9.3.4 Microhardness 208

9.3.5 Sound Velocity 208

9.4 Phonons and Lattice Vibronic Properties 208

9.4.1 Phonon Dispersion Relation 208

94 .2 Phonon Frequency 209

9.4.3 Mode Grüneisen Parameter 211

9.4.4 Phonon Deformation Potential 211

9.5 Collective Effects and Related Properties 211

9.5.1 Piezoelectric Constant 211

9.5.2 Fr?hlich Coupling Constant 211

9.6 Energy-Band Structure:Energy-Band Gaps 212

9.6.1 Basic Properties 212

9.6.2 E0-Gap Region 213

9.6.3 Higher-Lying Direct Gap 214

9.6.4 Lowest Indirect Gap 216

9.6.5 Conduction-Valley Energy Separation 218

9.6.6 Direct-Indirect-Gap Transition Pressure 218

9.7 Energy-Band Structure:Electron and Hole Effective Masses 218

9.7.1 Electron Effective Mass:Γ Valley 218

9.7.2 Electron Effective Mass:Satellite Valley 219

9.7.3 Hole Effective Mass 219

9.8 Electronic Deformation Potential 220

9.8.1 Intravalley Deformation Potential:Γ Point 220

9.8.2 Intravalley Deformation Potential:High-Symmetry Points 221

9.8.3 Intervalley Deformation Potential 222

9.9 Electron Affinity and Schottky Barrier Height 222

9.9.1 Electron Affinity 222

9.9.2 Schottky Barrier Height 223

9.10 Optical Properties 223

9.10.1 Summary of Optical Dispersion Relations 223

9.10.2 The Reststrahlen Region 224

9.10.3 At or Near the Fundamental Absorption Edge 224

9.10.4 The Interband Transition Region 226

9.10.5 Free-Carrier Absorption and Related Phenomena 227

9.11 Elastooptic,Electrooptic,and Nonlinear Optical Properties 228

9.11.1 Elastooptic Effect 228

9.11.2 Linear Electrooptic Constant 228

9.11.3 Quadratic Electrooptic Constant 228

9.11.4 Franz-Keldysh Effect 228

9.11.5 Nonlinear Optical Constant 228

9.12 Carrier Transport Properties 229

9.12.1 Low-Field Mobility:Electrons 229

9.12.2 Low-Field Mobility:Holes 230

9.12.3 High-Field Transport:Electrons 231

9.12.4 High-Field Transport:Holes 232

9.12.5 Minority-Carrier Transport:Electrons in p-Type Materials 232

9.12.6 Minority-Carrier Transport:Holes in n-Type Materials 232

9.12.7 Impact Ionization Coefficient 232

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